Growth of thinner gate oxides and their thickness control is one of many challenges in scaling technologies today. Nitrogen implantation can be used to control gate oxide thicknesses. This article reports a study on the fundamental behavior of nitrogen diffusion in silicon. Nitrogen was implanted as N2 1 at a dose of 5310 ions/cm at 40 and 200 keV through a 50 Å screen oxide into Czochralski si...

Within the R&D Program for the luminosity upgrade proposed for the Large Hadron Collider (LHC), silicon strip detectors (SSD) and test structures were manufactured on several high-resistivity substrates: ptype Magnetic Czochralski (MCz) and Float Zone (FZ), and n-type FZ. To test total dose (TID) effects they were irradiated with Co gammas and the impact of surface radiation damage on the detec...

In this study, we investigate the nature of some recombination active defects limiting the lifetime in Czochralski (CZ) silicon wafers, in the millisecond range. Due to their low concentrations, the observed defects are unlikely to be identified through Deep-Level Transient Spectroscopy (DLTS) or Electron Paramagnetic Resonance (EPR), hence we use lifetime spectroscopy combine with several anne...

The calculation of conductivity electron concentrations in n -GaSb at T = 295 K and 77 have been made. concentration “heavy” electrons the L-valley conduction band Т has shown to exceed “light” one Γ-valley. On contrary, are gathered Γ-valley.The results Hall measurements made on tellurium-doped samples n-GaSb obtained by Czochralski method represented. It that upon analysing data K, it is nece...

Crystal growth experiments (micro-pulling down or Czochralski methods, respectively) and DTA/TG measurements with Fe containing olivines (fayalite–forsterite solid solution) and with FeO (wustite) are performed. For both substances the oxygen partial pressure pO2 of the growth atmosphere had to be adjusted within the stability region of Fe 2+ for all temperatures ranging from room temperature t...

Rare-earth tantalates, with high density and monoclinic structure, and niobates with monoclinic structure have been paid great attention as potential optical materials. In the last decade, we focused on the crystal growth technology of rare-earth tantalates and niobates and studied their luminescence and physical properties. A series of rare-earth tantalates and niobates crystals have been grow...

We present the first in situ measurement of the evolution of strain fields due to oxygen precipitation in silicon single crystals by means of high-resolution neutron backscattering. The integrated reflecting power R and the lattice parameter variations Ad/d which are directly related to the strain fields have been measured as a function of temperature and annealing time. In the temperature rang...

Specific heat capacity measurements by differential scanning calorimetry (DSC) of single crystals solid solutions LiNbO3 and LiTaO3 are reported compared with corresponding ab initio calculations, the aim to investigate variation ferroelectric Curie temperature as a function composition. For this purpose, these were grown Czochralski pulling along c-axis. Elemental composition Nb Ta was investi...