In this paper, the electrical characteristics and sensitivity analysis of staggered type p-channel heterojunction electron-hole bilayer tunnel field effect transistor (HJ-EHBTFET) are thoroughly investigated via simulation study. The minimum lattice mismatch between InAs/GaAs0.1Sb0.9 layers besides low carrier effective mass of materials provides high probability ...

Colloidal quantum dots (QDs) have attracted interest as materials for opto-electronic applications, wherein their efficient energy use requires the understanding of carrier relaxation. In QDs capped by bifunctional thiols, used to attach the QDs to a surface, the relaxation is complicated by carrier traps. Using 2D spectroscopy at 77 K, we follow excitations in thiol-capped CdSe QDs with state ...