نتایج جستجو برای: amorphous semiconductor
تعداد نتایج: 85726 فیلتر نتایج به سال:
Multicellular organisms create complex patterned structures from identical, unreliable components. Learning how to engineer such robust behavior is important to both an improved understanding of computer science and to a better understanding of the natural developmental process. Earlier work by our colleagues and ourselves on amorphous computing demonstrates in simulation how one might build co...
Following 157 nm photoexcitation of amorphous solid water and polycrystalline water ice, photodesorbed water molecules (H(2)O and D(2)O), in the ground vibrational state, have been observed using resonance-enhanced multiphoton ionization detection methods. Time-of-flight and rotationally resolved spectra of the photodesorbed water molecules were measured, and the kinetic and internal energy dis...
The low-frequency vibrational and low-temperature thermal properties of amorphous solids are markedly different from those of crystalline solids. This situation is counterintuitive because all solid materials are expected to behave as a homogeneous elastic body in the continuum limit, in which vibrational modes are phonons that follow the Debye law. A number of phenomenological explanations for...
Silicon is one of the most famous elements in semiconductor technology, which used solar cells, IC, diodes, transistors etc. has different crystals and amorphous structures, while electronic structures crystalline are calculated, with experimental computational methods. These crystallines made from same element but have properties. As Fd3m Fm3m similar Si crystal structure, In this work, we cal...
SURESH, ARUN. Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors, Non-volatile Memory and Circuits for Transparent Electronics. (Under the direction of Dr. John F. Muth). The ability to make electronic devices, that are transparent to visible and near infrared wavelength, is a relatively new field of research in the development of the next generation of optoelectronic devices. A new clas...
Light absorbers with moderate band gaps (1-2 eV) are required for high-efficiency solar fuels devices, but most semiconducting photoanodes undergo photocorrosion or passivation in aqueous solution. Amorphous TiO2 deposited by atomic-layer deposition (ALD) onto various n-type semiconductors (Si, GaAs, GaP, and CdTe) and coated with thin films or islands of Ni produces efficient, stable photoanod...
Laser-induced melting and resolidification of single-crystalline indium phosphide (InP) upon irradiation with 150 fs laser pulses at 800 nm has been investigated by means of real-time-reflectivity measurements with subnanosecond time resolution. Melting of the surface is observed to occur very rapidly on a time scale shorter than our experimental resolution while the lifetime of the liquid phas...
We investigated the low-frequency noise properties in the inverted-staggered amorphous In–Ga– Zn–O a-IGZO thin-film transistors TFTs with the silicon dioxide SiO2 gate dielectric. The dependence of noise level on gate area indicates that the 1 / f noise is the dominate source and the contribution from TFT parasitic resistances can be ignored in long channel devices. The gate voltage dependent n...
ZnO films were coated on the order of micrometer thickness on various substrates using RF magnetron sputtering. Glass, mica and Si were used as amorphous and crystalline substrates to study film growth. X-ray diffraction measurements revealed a self-induced, (002) oriented texture on all substrates. Effects of residual stresses on growth behavior and possible mechanisms of textured crystallizat...
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