Metal-insulator-semiconductor (MIS) photoelectrodes offer a simple alternative to the traditional semiconductor-liquid junction and the conventional p-n junction electrode. Highly efficient MIS photoanodes require interfacial surface passivating oxides and high workfunction metals to produce a high photovoltage. Herein, we investigate and analyze the effect of interfacial oxides and metal workf...

Junctionless Nanowire Field-Effect Transistors (JNFETs), where the channel region is uniformly doped without the need for source-channel and drain-channel junctions or lateral doping abruptness, are considered an attractive alternative to conventional CMOS FETs. Previous theoretical and experimental works [1][2] on JNFETs have considered polysilicon gates and silicon-dioxide dielectric. However...

Low-resistance printed conductors are crucial for the development of ultra-low cost electronic systems such as radio frequency identification tags. Low resistance conductors are required to enable the fabrication of high-Q inductors, capacitors, tuned circuits, and interconnects. Furthermore, conductors of appropriate workfunction are also required to enable fabrication of printed Schottky diod...

In dual workfunction gate technologies it can be observed, that p+ poly gates of pMOSFETs tend to lose boron doping. This work presents a model for the transport of Si and B in the TiSi~/polysilicon bilayer system that can explain the saturation of the B dose loss.

The recent development of p-GaAs homojunction interfacial workfunction internal photoemission (HIWIP) far-infrared (\40 mm) detectors is briefly reviewed. The emphasis is on the detector performance, which includes responsivity, quantum efficiency, bias effects, cut-off wavelength, uniformity, noise, and negative capacitance characteristics. Promising results indicate that p-GaAs HIWIP detector...

Activation Energy is an important feature in determining the formation of ohmic contact on a semiconducting material. Activation energy depends on workfunction of the semiconductor. Thus, there is a good co-relation between the ohmicity, activation energy and workfunction. In this work, Cadmium Sulphide (CdS) thin film of 2 μm thickness is the semiconducting material fabricated using Chemical V...

The concept of homojunction infernal photoemission far-infrared (FIR) detectors has been successfully demonstrated using forward biased Si p-i-n diodes at 4.2 K. The basic structure consists of a heavily doped IR absorber layer and an intrinsic (or lightly doped) layer. An interfacial workfunction between these regions defines the long-wavelength cutoff (X,) of the detector. Three types of dete...

In this paper, we explore the quantitative investigation of the high-frequency performance of Gate Electrode Workfunction Engineered (GEWE) Silicon Nanowire (SiNW) MOSFET and compared with Silicon Nanowire MOSFET(SiNW MOSFET) using device simulators: ATLAS and DEVEDIT 3D. Simulation results demonstrate the improved RF performance exhibited by GEWE-SiNW MOSFET over SiNW MOSFET in terms of transc...

Surface doping of ZnO allows for tailoring the surface chemistry material while preserving superb electronic structure bulk. Apart from obvious changes in adsorption energies and activation catalysis, can alter workfunction allow it to be tuned specific photocatalytic optoelectronic applications. We present first-principles calculations Mn on (0001) surface. Various dopant concentrations have b...