A fully integrated CMOS wideband Low Noise Amplifier (LNA) operating over 2.3–7 GHz is designed and fabricated using a 0.18 μm CMOS process. The proposed structure is a common sourcecommon source (CS-CS) cascode amplifier with a coupling capacitor. It realizes both low voltage drop at load resistor (Rload) and high gain over 2.3–7 GHz with simultaneous noise and input matching and low power con...

Design of an RF CMOS ultra-wideband amplifier using parasitic-aware synthesis and optimization

In this article, we present a complex baseband model for a wideband power amplifier that incorporates carrier frequency dependent amplitude modulation (AM) and phase modulation (PM) (i.e., AM/AM and AM/PM) characteristics in the design process. The structure used to implement the amplifier model is a Wiener system which accounts for memory effects caused by the frequency selective nature of the...

In this paper, an 8 – 18 GHz wideband low noise amplifier (LNA) with an active balun fabricated in a 0.13-μm SiGe BiCMOS technology was presented. The LNA achieves 16dB of gain with 1.5 dB variation over the 8GHz to 18 GHz frequency band and a matched input with less than -9 dB of reflection. The minimum noise figure (NF) is 5 dB at 8GHz and increases to 6 dB at 18GHz. The measured IIP3 is -15-...

This paper presents a two-stage low-noise ultra-wideband amplifier to obtain high and smooth gain in 180nm CMOS Technology. The proposed structure has two common source stages with inductive feedback. First stage is designed about 3GHz frequency and second stage is designed about 8GHz. In simulation, symmetric inductors of TSMC 0.18um CMOS technology in ADS software is used.Simulations results ...

This paper presents a high CMRR and wideband current feedback Instrumentation Amplifier (IA). The proposed IA architecture consists of Fully Balanced Differential Difference Amplifier (FBDDA) and Differential Difference Amplifier (DDA) based on 2 generation current conveyor (CCII) with a buffer. From the simulation results evaluated by HSPICE, the proposed IA exhibits average CMRR was 109.3 dB ...

A 90-nm wideband (1500-1590nm) optical amplifier consisting of a dispersion-compensated-fiber-based Raman fiber amplifier and a semiconductor optical amplifier with gain clamping and dispersion compensation is demonstrated for wide bandwidth amplification with gain flatness as well as dispersion compensation. 10Gb/s DWDM transmission over 100km conventional single-mode fiber link with low biter...

A single stage wideband amplifier based on an AlGaN/GaN HEMT power cell with a total gate-width of 16 mm matched to 50 Ohm has been successfully developed and characterized by use of a single-carrier W-CDMA signal. A very wide bandwidth of more than 1.7 GHz covering several mobile radio frequency bands within Land S-band with peak output power levels up to 44 dBm has been demonstrated with meet...

Galvanic isolations are essential in many electrical patient-monitoring devices and industrial applications. In this paper, a low-profile wideband three-port isolation amplifier using coreless printed-circuit-board (PCB) transformers for isolation is studied. The PCB thickness used in the isolation amplifier is 0.4 mm. The diameters of the two coreless PCB transformers are 9.75 and 5.856 mm, re...

ISSN: 2347-8578 www.ijcstjournal.org Page 315 A 3-6 Ghz Current Reuse Noise Cancelling Low Noise Amplifier For WLAN And WPAN Application Shivabhakt Mhalasakant Hanamant [1], Dr.S.D.Shirbahadurakar [2] M.E Student , Guide [2] Department of E & TC Dr. D.Y.Patil COE, Ambi Pune – India ABSTRACT A wideband low-noise amplifier (LNA), which is a key block in the design of broadband receivers for multi...