نتایج جستجو برای: ultra thin film

تعداد نتایج: 240251  

2017
Junghwan Kim Takumi Sekiya Norihiko Miyokawa Naoto Watanabe Koji Kimoto Keisuke Ide Yoshitake Toda Shigenori Ueda Naoki Ohashi Hidenori Hiramatsu Hideo Hosono Toshio Kamiya

The variety of semiconductor materials has been extended in various directions, for example, to very wide bandgap materials such as oxide semiconductors as well as to amorphous semiconductors. Crystalline β-Ga2O3 is known as a transparent conducting oxide with an ultra-wide bandgap of ~ 4.9 eV, but amorphous (a-) Ga2Ox is just an electrical insulator because the combination of an ultra-wide ban...

Journal: :Bulletin of the Japan Institute of Metals 1990

2014
Yong Zhang John J. Magan Werner J. Blau

The development of thin film-based structures/devices often requires thin films to be transferred onto arbitrary substrates/surfaces. Controllable and non-destructive transfer method, although highly desired, remains quite challenging. Here we report a general method for fabrication and transfer of hybrid (ultra)thin films. The proposed solution-based in-situ transfer method shows not only its ...

2016
Tommi Kaplas Polina Kuzhir

A scalable technique of chemical vapor deposition (CVD) growth of ultra-thin graphitic film is proposed. Ultra-thin graphitic films grown by a one-step CVD process on catalytic copper substrate have higher crystallinity than pyrolytic carbon grown on a non-catalytic surface and appear to be more robust than a graphene monolayer. The obtained graphitic material, not thicker than 8 nm, survives d...

2011
Cristiano Albonetti Marianna Barbalinardo Silvia Milita Massimiliano Cavallini Fabiola Liscio Jean-François Moulin Fabio Biscarini

A process for fabricating ordered organic films on large area is presented. The process allows growing sexithiophene ultra-thin films at precise locations on patterned Si/SiO(x) substrates by driving the orientation of growth. This process combines the parallel local anodic oxidation of Si/SiO(x) substrates with the selective arrangement of molecular ultra-thin film. The former is used to fabri...

2017
Yu-Ru Lin Wan-Ting Tsai Yung-Chun Wu Yu-Hsien Lin

This study demonstrated an ultra thin poly-Si junctionless nanosheet field-effect transistor (JL NS-FET) with nickel silicide contact. For the nickel silicide film, two-step annealing and a Ti capping layer were adopted to form an ultra thin uniform nickel silicide film with low sheet resistance (Rs). The JL NS-FET with nickel silicide contact exhibited favorable electrical properties, includin...

Journal: :Nanotechnology 2006
Hong Shen Bolin Cheng Guowei Lu Tingyin Ning Dongyi Guan Yueliang Zhou Zhenghao Chen

Linear and nonlinear optical properties of periodic triangular Au nanoparticle arrays were investigated. We compared the optical nonlinearity of periodic Au nanoparticle arrays with that of the ultra-thin gold film consisting of randomly distributed spheroidal clusters. A pronounced enhancement of the third-order nonlinear optical susceptibility χ((3)) in Au arrays was observed, and the figure ...

1998
Qiang Lu Donggun Park Alexander Kalnitsky Celene Chang Chia-Cheng Cheng Sing Pin Tay Tsu-Jae King Chenming Hu

Capacitors with ultra-thin (6.0–12.0 nm) CVD Ta2O5 film were fabricated on lightly doped Si substrates and their leakage current (Ig–Vg) and capacitance (C–V ) characteristics were studied. For the first time, samples with stack equivalent oxide thickness around 2.0 nm were compared with ultra-thin silicon dioxide and silicon oxynitride. The Ta2O5 samples showed remarkably lower leakage current...

2010
Xiangshi Yin Elbio Dagotto

Recently, it has been shown that the size quantization of itinerant electrons in an ultra thin metal film plays an important role in the early formation stages and kinetic stabiliy of thin films. This Quantum Size Effect(QSE) also brings about a lot of new interesting physical and chemical properties of thin film. In this paper, I will give a brief introduction to the mechanism of QSE and talk ...

2000
M. H. Müser

The tribological properties of two smooth surfaces in the presence of a thin confined film are investigated with a generic model for the interaction between two surfaces and with computer simulations. It is shown that at large normal contact pressures, an ultra thin film automatically leads to static friction between two flat surfaces-even if the surfaces are incommensurate. Commen-surability i...

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