In this research, a high performance silicon nanowire field-effect transistor (transconductance as high as 34 µS and sensitivity as 84 nS/mV) is extensively studied and directly compared with planar passive microelectrode arrays for neural recording application. Electrical and electrochemical characteristics are carefully characterized in a very well-controlled manner. We especially focused on ...

Snapback breakdown is the second order effect of avalanche breakdown in a device. Snapback occur when the excess supply voltage and high currents created flow through the device and become unstable. These two breakdowns are used to explain the concept of Vertical Impact Ionization MOSFET (IMOS) in its Equivalent Circuit Model. The equivalent circuit model design consists of MOS transistors that...

The paper presents a simulation study of the electrical characteristic of Bulk Planar Junctionless Transistor (BPJLT) using spacer. The BPJLT is a transistor without any PN junctions in the vertical direction. It is a gate controlled variable resistor. The characteristics of BPJLT are analyzed by varying the oxide material under the gate. It can be shown from the simulation that an ideal subthr...

Nowadays carbon nanoparticles are applied on the island of single electron transistor and Nano-transistors. The basis of single electron devices (SEDs) is controllable single electron transfer between small conducting islands. Based on the important points in quantum mechanics, when a wave passes through several spatial regions with different boundaries, the wave function of the first region di...

End-substitution of quarterthiophene and sexithiophene with hexyl groups leads to highly soluble conjugated oligomers, -dihexylquarterthiophene (DH-4T) and -dihexylsexithiophene (DH-6T). We have characterized these oligomers for optical and electrical properties. We fabricated an organic thin film transistor (OTFT) using the above two air-stable p-type organic semiconductor materials. We obtain...

End-substitution of quarterthiophene and sexithiophene with hexyl groups leads to highly soluble conjugated oligomers, -dihexylquarterthiophene (DH-4T) and -dihexylsexithiophene (DH-6T). We have characterized these oligomers for optical and electrical properties. We fabricated an organic thin film transistor (OTFT) using the above two air-stable p-type organic semiconductor materials. We obtain...

A new transistor effect is demonstrated in a 120 nm base, bipolar quantum-well, resonanttunneling transistor (BiQuaRTT) . In this BiQuaRTT, a strong, multiple negative differential resistance (NDR) characteristic is obtained at room temperature with highcurrent gain ( > 50). The effect is shown to be the consequence of an asymmetric, quantumwell-base heterostructure whose shape is controlled by...

In this paper various mixers are defined for CDMA applications . Using CMOS makes easier for mixers to act on same chip with other digital and analog circuits . The topologies we are defining are dual gate mixers , back gate mixers, single balanced current switching mixers and back end mixers . The backgate mixer utilizes the inherent lateral bipolar transistor in CMOS. Device simulations were ...

This paper introduces future devices for multi-valued logic implementation. Quantum dot gate field effect transistor (QDGFET) works based on the change in threshold voltage due to stored charge in the quantum dots in the gate region. Quantum dot channel field effect transistor (QDCFET) produces more number of states in their transfer characteristics because of charge flow through the mini-band ...

Analog circuit design is a challenging activity because the analog design procedure targets complex design specifications that are closely related to transistor sizing and device technology dependent. This paper addresses the design of CMOS Miller Operational Transconductance Amplifier (OTA) using a design methodology based on the gm/ID characteristic with some new features, including to the de...