نتایج جستجو برای: ti contact
تعداد نتایج: 196715 فیلتر نتایج به سال:
OBJECTIVES Ti, which is biocompatible and resistant to corrosion, is widely used for dental implants, particularly in patients allergic to other materials. However, numerous studies have reported on Ti allergy and the in vitro corrosion of Ti. This study investigated the conditions that promote the elution of Ti ions from Ti implants. METHODS Specimens of commercially pure Ti, pure nickel, a ...
OBJECTIVE This research was designed to investigate the effects of low pressure radio-frequency (RF) oxygen plasma treatment (OPT) on the surface of commercially pure titanium (CP-Ti) and Ti6Al4V. Surface topography, elemental composition, water contact angle, cell viability, and cell morphology were surveyed to evaluate the biocompatibility of titanium samples with different lengths of OP trea...
To improve the interfacial stability at high temperatures, n-type skutterudite (SKD) thermoelectric joints with sandwich structures of Ti/Mo/Yb0.3Co4Sb12 were successfully designed and fabricated. In this structure, Mo and Ti were introduced as the barrier layer with the goal of suppressing the interfacial diffusion and the buffer layer with the goal of enhancing the bonding strength, respectiv...
A new ohmic contact scheme for gallium nitride is presented. The use of Nitrideforming metal Over Gallide-forming metal, “NOG”, can modify the thermodynamic activity of N and Ga near the interface. This in turn can modify the near-surface point defect concentrations, particularly the vacancies of Ga and N. The principle of this contact scheme was shown to be consistent with results from Ni/Au, ...
We report a new metallization process for achieving low resistance ohmic contacts to molecular beam epitaxy grown n-GaN (--Or7 cme3) using an Ah% bilayer metallization scheme. Four different thin-film contact metallizations were compared during the investigation, including Au, Al, Ti/Au, and Ti/Al layers. The metals were first deposited via conventional electron-beam evaporation onto the GaN su...
Ohmic contacts to AlGaN/GaN heterostructures, which have low contact resistance and a good surface morphology, are required for the development of high temperature, high power and high frequency electronic devices. The paper presents the investigation of a Ti/Al based Ti/Al/Ni/Au ohmic contact to AlGaN/GaN heterostructures. Multilayer metallization of Ti/Al/Ni/Au was evaporated by an electron g...
The effect of different contact configurations (semi-infinite extended-channel, normal metal and ferromagnetic metal) on quantum transport through thin Bi2Se3 three-dimensional (3D) topological insulator (TI) slab (channel) has been investigated through Non-Equilibrium Green Function. The issue of contact dependent current flow and distribution across quintuple layers of 3D-TI has been addresse...
PURPOSE The aim of this study was to evaluate the surface properties and biological response of an anodized titanium surface by cell proliferation and alkaline phosphatase activity analysis. METHODS Commercial pure titanium (Ti) disks were prepared. The samples were divided into an untreated machined Ti group and anodized Ti group. The anodization of cp-Ti was formed using a constant voltage ...
Two-step thermal oxidation was proposed for Ti and Ti alloys as a surface-treatment process for preparing an anatase-containing TiO2 layer. This process consisted of treatment in a CO-containing atmosphere (first step) and subsequent treatment in air (second step). In this chapter, first, the current status of TiO2 coating onto Ti and Ti alloys for biomedical applications is reviewed; then our ...
We present evidence of etching LiNbO3 when annealing two wafers in contact with an intermediate Ti strip. Etched features are characterized qualitatively using atomic force microscopy. The impact of the Ti strip thickness on the depth and roughness of the etched surface is quantified. Etched trenches of similar depths to the original Ti film are achieved with very smooth etched surface. © 2007 ...
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