The activation energies associated with the formation of a superlattice intrinsic stacking fault (SISF) from an antiphase domain boundary (APB) and the formation of a superlattice extrinsic stacking fault (SESF) from a complex stacking fault (CSF) in g 0 phase of Ni-based superalloys are calculated using a microscopic phase field dislocation model in combination with the nudged elastic band (NE...

Starting from a semi-empirical potential designed for Cu, we have developed a series of potentials that provide essentially constant values of all significant (calculated) materials properties except for the intrinsic stacking fault energy, which varies over a range that encompasses the lowest and highest values observed in nature. These potentials were employed in molecular dynamics (MD) simul...

Crystallization and vitrification of tetrahedral liquids are important both from a fundamental and a technological point of view. Here, we study via extensive umbrella sampling Monte Carlo computer simulations the nucleation barriers for a simple model for tetrahedral patchy particles in the regime where open tetrahedral crystal structures (namely, cubic and hexagonal diamond and their stacking...

Stacking fault formation during epitaxial SiGe layer growth in bipolar complementary metal oxide semiconductor (BiCMOS) process which caused high yield loss due to its leakage current on bipolar transistors has been studied. Through the analysis of process flow, oxidation induced stacking faults were indicated as a possible root cause of the yield loss. The identification of the oxidation induc...

In this work, dynamic mechanical properties of three high-manganese steels with TRIP/TWIP or fully TWIP characteristics are studied. High strain rate experiments in the range of true strain rates between ~500 and 1800 /s are conducted using a dynamic torsional testing setup. All the three steels show a positive strain rate sensitivity in the intermediate range of strain rates (up to 500 /s). Bu...

Stacking faults in (1010) unicrystal Co and Co-alloy thin films have been analyzed by the electron diffraction technique. As predicted no diffraction contrast of stacking faults could be observed when the beam is parallel to the [1010] direction. However, both by plan-view TEM observation and electron diffraction along the [1120] direction reveal that the stacking fault density in biased pure C...

The intrinsic stacking-fault energies and free energies for Ag, Cu, and Ni are derived from molecular-dynamics simulations using the empirical tight-binding potentials of Cleri and Rosato [Phys. Rev. B 48, 22 (1993)]. While the results show significant deviations from experimental data, the general trend between the elements remains correct. This allows to use the potentials for qualitative com...

the dynamic behavior of three high manganese steels with very different stacking faultenergy (sfe) values (4-30 mj/m2) were studied using high strain rate torsional tests. the hotrolledmicrostructure of the steel with the lowest sfe of 4 mj/m2 consisted of a duplex mixture ofaustenite and ε-martensite, but those of the other two steels were fully austenitic. the deformedmicrostructures were stu...

Z-shape faulted dipoles in deformed GaAs were investigated by using high resolution electron microscopy. There is no difference in the core structure of the a and b dislocations of stair-rod and 90 Shockley partials, nor in the dissociated stacking fault width. The central stacking fault is found to generate large local atomic displacements and exhibits a different structure from that of the in...

The interfacial energies of twin boundaries and stacking faults in metal magnesium have been calculated using first-principles supercell approach. Four types of twin boundaries and two types of stacking faults are investigated, namely, those due to the (1011) mirror reflection, the (1011) mirror glide, the (1012) mirror reflection, the (1012) mirror glide, the I1 stacking fault, and I2 stacking...