*Correspondence: Patrick Guo-Qiang Lo, Institute of Microelectronics, Agency for Science, Technology and Research (A*STAR), Singapore Science Park II, 11 Science Park Road, 117685 Singapore e-mail: [email protected] Integrated optical light source on silicon is one of the key building blocks for optical interconnect technology. Great research efforts have been devoting worldwide to explore...

INSTRUCTIONS The diameter of silicon wafer becomes larger in order to increase the number of chips per one wafer. For such a larger diameter silicon ingot is mainly sliced by using multi-wire method, in which a long thin wire is used with slurry. In this method, several hundreds of wafers could be sliced at the same time. However there are still problems remained, such as large cracks, slurry t...

Silicon evanescent lasers and amplifiers have been demonstrated utilizing low temperature wafer bonding technology. This approach enables the creation of high performance, small footprint active devices on silicon for photonic integrated circuits. Introduction Photonic integration has progressed greatly in realizing various functions for optical interconnects as well as long haul communication ...

Axiomatic Design was used to develop a complete platform for chemical mechanical polishing (CMP) of silicon wafers. A functional requirement of the machine emerging from the axiomatic design process is the control of the wafer-scale polishing uniformity. Mechanisms to maintain control of the uniformity were designed, and integrated into a wafer carrier, which holds the wafer during polishing an...

Acoustic techniques are used to monitor the temperature of silicon wafers in rapid thermal processing environments from room temperature to 1000" C with f 5 " C accuracy. Acoustic transducers are mounted at the bases of the quartz pins that support the silicon wafer during processing. An electrical pulse applied across the transducer generates an extensional mode acoustic wave which is guided b...

Wafer bonding techniques play a key role in the present day silicon bulk micromachining for MEMS based sensors and actuators. Various silicon wafer bonding techniques and their role on MEMS devices such as pressure sensors, accelerometers and micropump have been discussed. The results on the piezoresistive pressure sensors monolithically integrated with a MOSFET differential amplifier circuit h...

Accurate control of the defectivity of silicon crystals and wafers is a subject of immense importance to both the silicon and IC industries. Exploding costs of wafer development and production as well as the processing of 300mm wafers means that predictive defect engineering is now, more than ever a requirement for both industries. There is little scope any more for iterative approaches to thes...

In this work, we studied the electro-optical properties of high-aligned carbon nanotubes deposited at room temperature. For this, we used the High Density Plasma Chemical Vapor Deposition system. This system uses a new concept of plasma generation: a planar coil is coupled to an RF system for plasma generation. This was used together with an electrostatic shield, for plasma densification, there...

Nano-porous silicon were simply prepared from p-type single crystalline silicon wafer by electrochemical etching technique via exerting constant current density in two different HF-Ethanol and HF-Ethanol-H2O solutions. The mesoporous silicon layers were characterized by field emission scanning electron microscopy and scanning electron microscopy. The results demonstrate that the width of nano-p...

We demonstrate laser direct growth of few layer graphene on a silicon substrate. In our study, a continuous wave laser beam was focused on a poly(methyl methacrylate) (PMMA)-coated silicon wafer to evaporate PMMA and melt the silicon wafer. Carbon atoms, decomposed from PMMA, were absorbed by the molten silicon surface, and then separated from silicon in the cooling process to form few-layer gr...