Complementary metal oxide semiconductor (CMOS) radio frequency (RF) circuit design has been an ever-lasting research field. It has gained so much attention since RF circuits offer high mobility and wide-band efficiency, while CMOS technology provides the advantage of low cost and high integration capability. At the same time, CMOS device size continues to scale to the nanometer regime. Reliabil...

Dit proefschrift is goedgekeurd door de promotoren: Summary 125 Samenvatting 127 List of publications 129 Dankwoord 131 Chapter 1 Introduction 1.1 RF CMOS The use of mobile wireless communication systems is rapidly increasing. Electronics involved in these systems are typically referred to as RF electronics. RF stands for radio frequencies, a term covering all frequencies of the electromagnetic...

In this paper, we have investigated the design parameters of RF CMOS switch, which will be used for the wireless telecommunication systems. A double-pole four-throw double-gate radio-frequency complementary-metal-oxide-semiconductor (DP4T DG RF CMOS) switch for operating at the 1 GHz is implemented with 45-nm CMOS process technology. This proposed RF switch is capable to select the data streams...

In recent years, the wireless communication has evolved towards multi-function and multi-standard terminals. Reducing the number of external components and the reuse of both digital and RF functional blocks is a key feature when a single terminal has to process a multitude of standards with different data rates, modulation types, and frequency bands. Usually, the requirement for low-cost in con...

Advanced concepts for wireless communications present a vision of technology that is embedded in our surroundings and practically invisible, but present whenever required. From established radio techniques like GSM, 802.11, or Blue-tooth to more emerging like ultra-wideband (UWB) or smart dust moats, a common denominator for future progress is the underlying CMOS technology. Although the use of...

Requirements of RF CMOS device and its related design issues to operate at high frequencies are discussed. Problems faced by current CMOS models and its lack of accuracy in capturing high frequency are focused. To improve model accuracy, Vendor modeling approach is discussed to model frequency dependent parameters like substrate resistance, gate resistance and noise signals. In this connection,...

Recent advances in complementary metal oxide semiconductor (CMOS) processing, continuous scaling of gate length, and progress in silicon on insulator have stirred serious discussions on the suitability of metal-oxide semiconductor field-effect transistors (MOSFETs) for RF/microwave applications. This paper covers the recent advances and current status of mainstream CMOS as the dominating techno...

This paper describes a 24GHz CMOS RF transceiver for car radar applications. The transceiver consists of 4-channel receiver array and 1-channel transmitter. The prototype is designed by standard RF CMOS 0.13-μm technology. The simulated receiver gain is 30dB and simulated tramsmitted output power is 15dBm at 24GHz.

This paper presents the integration of an inductor by complementary metaloxide-semiconductor (CMOS) compatible processes for integrated smart microsensor systems that have been developed to monitor the motion and vital signs of humans in various environments. Integration of radio frequency transmitter (RF) technology with complementary metal-oxide-semiconductor/micro electro mechanical systems ...