This paper presents work aimed at optimizing the fabrication of silicon nitride Si(x)N(y) thin-film visible-light planar waveguides using plasma-enhanced chemical vapour deposition (PECVD). The effects of plasma frequency, precursor gas ratio, and thermal annealing in relation to waveguide optical properties (refractive index, propagation losses) are studied. Experimental results over a wide ra...

The principal object of this paper is to develop a neural network model, which can simulate the plasma enhanced chemical vapor deposition (PECVD) process in TFT-Array procedure. Then the Boolean logic rules are extracted from the trained neural network in order to establish a knowledge base of expert system. The input data of neural network was collected form the process parameters of PECVD mac...

1 Abstract— The special characteristics and singular properties of diamond-like carbon (DLC) thin films deposited by pulsed DC plasma enhanced chemical vapor deposition (PECVD), such as hardness and wear resistance, are suitable for self assembly applications as protective coating and as nanostructured surfaces. In this master thesis project, nanostructured DLC surfaces will be designed and cha...

Plasma Enhanced Chemical Vapour Deposition (PECVD) is one of the main plasma processes which induce charging damage to gate oxides during the VLSI processes. All the previous studies, however, describe the charging phenomena only at the beginning of PECVD process, when a very thin oxide layer covers the metal lines. We present and analyze in this paper, a new strong charging phenomenon in the e...

For integrated passive device (IPD) applications, we have successfully developed and characterized metalinsulator-metal (MIM) capacitors with 2000 Å plasma-enhanced chemical vapor deposition (PECVD) silicon nitride which are deposited with the SiH4/NH3 gas mixing rate, working pressure, and RF power of PECVD at 250oC. Five PECVD process parameters are designed to lower the refractive index and ...

The crystallization of hydrogenated amorphous silicon layers (a-Si:H) [1,2] deposited by plasma enhanced chemical vapor deposition (PECVD) is of great interest. Generally, laser or metals are used to induce crystallization in aSi:H films. We have found that films deposited at high rf power (> 0.2 W/cm2) by PECVD technique shows some crystallites embedded in a-Si:H matrix and their after its vac...

A key process in thin film silicon-based solar cell manufacturing is plasma enhanced chemical vapor deposition (PECVD) of the active layers. The deposition process can be monitored in situ by plasma diagnostics. Three types of complementary diagnostics, namely optical emission spectroscopy, mass spectrometry and non-linear extended electron dynamics are applied to an industrial-type PECVD react...

Traditionally, JIS SKD11 tool steel is corresponding to the AISI D2. Since this material possesses high hardness and excellent wear resistance, it is usually used as a mold material and cutting tools.1,2) In order to improve the tool life, many studies have focused on surface treatment as a method of protecting the internal material.2) Nitriding is a thermo-chemical process with nitrogen diffus...