نتایج جستجو برای: porous semiconductor

تعداد نتایج: 109885  

2014
Xiao Sun Adrian Keating Giacinta Parish

UNLABELLED Suspended micromachined porous silicon beams with laterally uniform porosity are reported, which have been fabricated using standard photolithography processes designed for compatibility with complementary metal-oxide-semiconductor (CMOS) processes. Anodization, annealing, reactive ion etching, repeated photolithography, lift off and electropolishing processes were used to release pa...

Journal: :Nanotechnology 2009
D D Cheng M J Zheng L J Yao S H He L Ma W Z Shen X Y Kong

Uniform and vertical indium-oxide nanotube (IONT) arrays embedded well in n-type InP single crystal have been successfully prepared in situ by porous InP-template-assisted chemical vapor deposition (CVD). This IONT/InP nanostructure reveals high sensitivity to humidity at room temperature, which is ascribed to the ultrahigh surface-to-volume ratio of this nanostructure and the large number of o...

2016
Miguel Guerrero Jin Zhang Ainhoa Altube Eva García-Lecina Mònica Roldan Maria Dolors Baró Eva Pellicer Jordi Sort

A facile synthetic approach to prepare porous ZnO@CuNi hybrid films is presented. Initially, magnetic CuNi porous layers (consisting of phase separated CuNi alloys) are successfully grown by electrodeposition at different current densities using H2 bubbles as a dynamic template to generate the porosity. The porous CuNi alloys serve as parent scaffolds to be subsequently filled with a solution c...

Journal: :Chemical communications 2010
Xiao-Xin Zou Guo-Dong Li Kai-Xue Wang Lu Li Juan Su Jie-Sheng Chen

A light-inducing approach has been demonstrated for the preparation of porous TiO(2) with a large number of stored electrons, which can provide an electron source for subsequent use in redox reactions and provide a spin source to achieve a new room-temperature ferromagnetic semiconductor.

2012
Vicente Torres-Costa Claudia de Melo Aurelio Climent-Font Fernando Argulló-Rueda Osvaldo de Melo

Isothermal close space sublimation, a simple and low-cost physical vapour transport technique, was used to infiltrate ZnTe and CdSe semiconductors in porous silicon. The structure of the embedded materials was determined by X-ray diffraction analysis while Rutherford backscattering spectra allowed determining the composition profiles of the samples. In both cases, a constant composition of the ...

2013
Xuan Zhang Chao Hu Hua Bai Yan Yan Junfang Li Haifeng Yang Xiaojing Lu Guangcheng Xi

The degradation of toxic gases and liquids using a catalyst and solar energy is an ideal method, compared with landfill and combustion methods. The search for active semiconductor photocatalysts that efficiently decompose contaminations under light irradiation remains one of the most challenging tasks for solar-energy utilization. In this work, free-supporting three-dimensional (3D) nanosheeted...

Journal: :Journal of the American Chemical Society 2012
Jie Lian Yang Xu Ming Lin Yinthai Chan

We introduce a facile and robust methodology for the aggregation-free aqueous-phase synthesis of hierarchically complex metal-semiconductor heterostructures. By encapsulating semiconductor nanostructures within a porous SiO(2) shell with a hollow interior, we can isolate each individual particle while allowing it access to metal precursors for subsequent metal growth. We illustrate this by Pt d...

2009
K Rumpf P Granitzer P Poelt

A magnetic semiconductor/metal nanocomposite with a nanostructured silicon wafer as base material and incorporated metallic nanostructures (Ni, Co, NiCo) is fabricated in two electrochemical steps. First, the silicon template is anodized in an HF-electrolyte to obtain a porous structure with oriented pores grown perpendicular to the surface. This etching procedure is carried out either in formi...

2005
S. M. Weiss M. Haurylau

As continued progress towards faster, low power consuming microelectronic devices becomes increasing difficult due to the scaling challenges of electrical interconnects, it becomes even more critical to explore alternative technologies. Tunable porous silicon photonic bandgap structures are viable building blocks for optical interconnects, which present a possible long term solution to the inte...

2002
Michael J. Schöning Anette Simonis Christian Ruge Mattea Müller

Macroporous silicon has been etched from n-type Si, using a vertical etching cell where no rear side contact on the silicon wafer is necessary. The resulting macropores have been characterised by means of Scanning Electron Microscopy (SEM). After etching, SiO2 was thermally grown on the top of the porous silicon as an insulating layer and Si3N4 was deposited by means of Low Pressure Chemical Va...

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