We show that a Spin Field Effect Transistor, realized with a semiconductor quantum wire channel sandwiched between half-metallic ferromagnetic contacts, can have Fano resonances in the transmission spectrum. These resonances appear because the ferromagnets are halfmetallic, so that the Fermi level can be placed above the majority but below the minority spin band. In that case, the majority spin...

The role of the inversion-layer centroid in a double-gate metal-oxide-semiconductor field-effect-transistor (DGMOSFET) has been investigated. The expression obtained for the inversion charge is similar to that found in conventional MOSFET’s, with the inversion-charge centroid playing an identical role. The quantitative value of this magnitude has been analyzed in volume-inversion transistors an...

We report a simple, controlled doping method for achieving n-type, intrinsic, and p-type lead sulfide (PbS) nanowires (NWs) grown by chemical vapor deposition without introducing any impurities. A wide range of carrier concentrations is realized by adjusting the ratio between the Pb and S precursors. The field effect electron mobility of n-type PbS NWs is up to 660 cm(2)/(V s) at room temperatu...

The gate current of MOS tunneling diodes biased at inversion region with different substrate doping is investigated. For p-type substrate (1–5 -cm) devices, the tunneling diode works in the deep depletion region and the inversion current is dominated by the thermal generation rate of minority electrons via traps at Si/SiO2 interface and in the deep depletion region. The activation energy is app...

The paper describes developments to date on the EMILLE Project (Enabling Minority Language Engineering) being carried out at the Universities of Lancaster and Sheffield. EMILLE was established to construct a 67 million word corpus of South Asian languages. In addition to undertaking this corpus construction, the project has had to address a number of related issues in the context of establishin...

application of quantum-dot is a promising technology for implementing digital systems at nano-scale.  quantum-dot cellular automata (qca) is a system with low power consumption and a potentially high density and regularity. also, qca supports the new devices with nanotechnology architecture. this technique works based on electron interactions inside quantum-dots leading to emergence of quantum ...

We present the epitaxial growth of Ge and Ge0.94Sn0.06 layers with 1.4% and 0.4% tensile strain, respectively, by reduced pressure chemical vapor deposition on relaxed GeSn buffers and the formation of high-k/metal gate stacks thereon. Annealing experiments reveal that process temperatures are limited to 350 °C to avoid Sn diffusion. Particular emphasis is placed on the electrical characterizat...

IGBT Fundamentals The Insulated Gate Bipolar Transistor (IGBT) is a minority-carrier device with high input impedance and large bipolar current-carrying capability. Many designers view IGBT as a device with MOS input characteristics and bipolar output characteristic that is a voltage-controlled bipolar device. To make use of the advantages of both Power MOSFET and BJT, the IGBT has been introdu...

In this paper, novel hybrid MOSFET(HMOS) structure has been proposed to reduce the gate leakage current drastically. This novel hybrid MOSFET (HMOS) uses source/drain-to-gate non-overlap region in combination with high-K layer/interfacial oxide as gate stack. The extended S/D in the non-overlap region is induced by fringing gate electric field through the high-k dielectric spacer. The gate leak...

In advance longwall mining, the safety of mine network, production rate, and consequently, economic conditions of a mine are dependent on the stability conditions of gate roadways. The gate roadway stability is a function of two important factors: 1) characteristics of the excavation damaged zone (EDZ) above the gate roadway and 2) loading effect due to the caving zone (CZ) above the longwall w...