The lateral band-to-band tunneling (L-BTBT) leakage mechanism increases the OFF state current and prevents junctionless transistor from scaling. effect of L-BTBT on FIN shaped gate Junctionless field transistor(JLFET) with ground plane (GP) in oxide has been investigated. proposed device is simulated using 3-D Silvaco TCAD shows that it can mitigate leads to efficient volume depletion which rel...

We investigated the source-to-drain capacitance (Csd) due to DIBL effect of silicon nanowire (SNW) MOSFETs. Short-channel SNW devices operating at high drain voltages have the positive value of Csd by DIBL effect. On the other hand, junctionless SNW MOSFETs without source/drain (S/D) PN junctions have negative or zero values by small DIBL effect. By considering the additional source-todrain cap...

In this work, we present atomic scale simulation of junctionless semiconducting single–walled carbon nanotubes field effect transistors (CNT–FETs) and compare their performance to silicon nanowire (SiNW) transistors with similar dimensions. The energy dispersions relations for p–type SiNW and CNT are compared. The response of the transistors to source–drain bias and gate voltage is explored. Co...

Junctionless Nanowire Field-Effect Transistors (JNFETs), where the channel region is uniformly doped without the need for source-channel and drain-channel junctions or lateral doping abruptness, are considered an attractive alternative to conventional CMOS FETs. Previous theoretical and experimental works [1][2] on JNFETs have considered polysilicon gates and silicon-dioxide dielectric. However...

In this paper, analog/radio frequency (RF) electrical characteristics of triple material gate stack-graded channel double gate-Junctionless (TMGS-GCDG-JL) strained-Si (s-Si) MOSFET with fixed charge density is analyzed the help Sentaurus TCAD. By varying various device parameters, analog/RF performance proposed TMGS-GCDG-JL s-Si evaluated in terms transconductance-generation-factor (TGF), early...

The hairpin ribozyme is a small catalytic RNA comprising two helix-loop-helix domains linked by a four-way helical junction (4WJ). In its most basic form, each domain can be formed independently and reconstituted without a 4WJ to yield an active enzyme. The production of such minimal junctionless hairpin ribozymes is achievable by chemical synthesis, which has allowed structures to be determine...

The design of double gate n-channel transistor named as junctionless vertical slit field effect transistor (JL VeSFET) is demonstrated in this paper. JLVeSFET is novel twin gate device which turns on and off depending upon the extension of depletion region from two gates inside the channel. It is observed that it offers very low OFF current with ideal subthreshold slope. JLVeSFET is compared wi...

Extremely thin silicon show good mechanical flexibility because of their 2-D like structure and enhanced performance by the quantum confinement effect. In this paper, we demonstrate a junctionless FET which reveals a room temperature quantum confinement effect (RTQCE) achieved by a valley-engineering of the silicon. The strain-induced band splitting and a quantum confinement effect induced from...