نتایج جستجو برای: insulated gate bipolar transistor

تعداد نتایج: 95915  

2007
In-Hwan Ji Kyu-Heon Cho Young-Hwan Choi Soo-Seong Kim Kwang-Hoon Oh Chong-Man Yun

2002
Peter O. Lauritzen Gert K. Andersen Martin Helsper

Simple parameter extraction is the goal of a new Basic IGBT model designed for use by application engineers. The model has good accuracy yet its parameters can be quickly extracted from three standard measurements or from data sheets.

Journal: :Fuzzy Sets and Systems 2015
Salvatore Greco Radko Mesiar Fabio Rindone

The concept of semicopula plays a fundamental role in the definition of a universal integral. We present an extension of semicopula to the case of symmetric interval [−1,1]. We call this extension bipolar semicopula. The last definition can be used to obtain a simplified definition of the bipolar universal integral. Moreover bipolar semicopulas allow for extension of theory of copulas to the in...

2002
F. Wakeman G. Lockwood M. Davies

Abstract Models and experimental data are used to predict the performance of large area pressure contact IGBTs, offering ratings equivalent to the largest power conventional technology devices. Differences in the electromechanical characteristics of pressure contact devices, when compared to substrate mounted devices, are reviewed and how these influence the potential performance of devices wit...

2003
Wen-Lung Chou Ethan Tu

A constant exposure method for DSC IGBT strobe is proposed. This method is based on two lookup tables (exposure and energy table). In this method, light box is used to generate exposure table and different flash time is used to generate energy table. Through exposure table and preflash result, we can get digital number ratio of preflash to main flash. This ratio and energy table can be used for...

Journal: :Microelectronics Reliability 2015
Paula Diaz Reigosa Rui Wu Francesco Iannuzzo Frede Blaabjerg

Article history: Received 26 May 2015 Received in revised form 30 June 2015 Accepted 3 July 2015 Available online xxxx

Journal: :Microelectronics Reliability 2005
Stephane Azzopardi A. Benmansour M. Ishiko Eric Woirgard

The purpose of this study is an assessment of the Trench IGBT reliability at low temperature under static and dynamic operations by the aim of intensive measurements. The analysis of the Trench IGBT behaviour in these conditions is dedicated to the HEV applications. One question can be raised in case of the use of HEV in countries where during winter the temperature drops down -50°C or less: ar...

2013
Vivek Sharma Gaurav Mendiratta

This paper presents simulation results of the harmonics analysis of motor current signatures under different fault condition of CSI (Current Source Inverter) fed induction motor drive. In this work, simulation studies are performed for two different post fault conditions i.e. open circuiting of one of the six IGBTs(Insulated Gate Bipolar Transistor) gate, blowing off one IGBT .Under these fault...

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