Due to its direct band gap of ~1.35 eV, appropriate energy band-edge positions, and low surface-recombination velocity, p-type InP has attracted considerable attention as a promising photocathode material for solar hydrogen generation. However, challenges remain with p-type InP for achieving high and stable photoelectrochemical (PEC) performances. Here, we demonstrate that surface modifications...

BACKGROUND Intermittent negative pressure (INP) applied to the lower leg and foot increases foot perfusion in healthy volunteers. The aim of the present study was to describe the effects of INP to the lower leg and foot on foot macro- and microcirculation in patients with lower extremity peripheral arterial disease (PAD). METHODS In this experimental study, we analyzed foot circulation during...

Indium phosphide nanowires (InP NWs) are accessible at 440 °C from a novel vapor phase deposition approach from crystalline InP sources in hydrazine atmospheres containing 3 mol % H₂O. Uniform zinc blende (ZB) InP NWs with diameters around 20 nm and lengths up to several tens of micrometers are preferably deposited on Si substrates. InP particle sizes further increase with the deposition temper...

The existence of polytypism in semiconductor nanostructures gives rise to the appearance of stacking faults which many times can be treated as quantum wells. In some cases, despite of a careful growth, the polytypism can be hardly avoided. In this work, we perform an ab initio study of zincblende stacking faults in a wurtzite InP system, using the supercell approach and taking the limit of low ...

X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy have been used to determine interfacial properties of HfO2 and HfAlO gate dielectrics grown on InP by atomic layer deposition. An undesirable interfacial InPxOy layer is easily formed at the HfO2/InP interface, which can severely degrade the electrical performance. However, an abrupt interface can be achieved ...

Ice nucleating particles active at warm temperatures (e.g. -8 °C; INP-8) can transform clouds from liquid to mixedphase, even at very small number concentrations (<10 m). Over the course of 15 months, we found very similar patterns in weekly concentrations of INP-8 in PM10 (median = 1.7 m, maximum = 10.1 m) and weekly amounts of rainfall (median = 28 mm, maximum = 153 mm) at Birkenes, southern ...

The need for higher performance electronics for space and defense applications has driven the development of InP heterojunction technologies. For the past 10 years, TRW has been developing InP HBT and HEMT technologies for mission critical applications [1– 3]. Consistent and continuous improvements in the basic MBE structure and process technology have enhanced device and circuit performance, p...

Indium Phosphide QuantumDots (InP QDs) have emerged as an alternative to toxic metal ion based QDs in nanobiotechnology. The ability to generate cationic surface charge, without compromising stability and biocompatibility, is essential in realizing the full potential of InP QDs in biological applications. We have addressed this challenge by developing a place exchange protocol for the preparati...

Indium Phosphide Quantum Dots (InP QDs) have emerged as an alternative to toxic metal ion based QDs in nanobiotechnology. The ability to generate cationic surface charge, without compromising stability and biocompatibility, is essential in realizing the full potential of InP QDs in biological applications. We have addressed this challenge by developing a place exchange protocol for the preparat...

N. Dobigeon*, Y. Altmann, N. Brun and S. Moussaoui University of Toulouse, IRIT/INP-ENSEEIHT, 31071 Toulouse Cedex 7, France School of Engineering and Physical Sciences, Heriot-Watt University, Riccarton, Edinburgh, EH14 4AS, United Kingdom Laboratoire de Physique des Solides, CNRS, Univ. Paris-Sud, Univ. Paris-Saclay, 91405 Orsay Cedex, France Ecole Centrale de Nantes, IRCCyN, UMR CNRS 6597, N...