We report a systematic study of thermal effects in photonic crystal membrane lasers based on line-defect cavities. Two material platforms, InGaAsP and InP, are investigated experimentally and numerically. Lasers with quantum dot layers embedded in an InP membrane exhibit lasing at room temperature under CW optical pumping, whereas InGaAsP membranes only lase under pulsed conditions. By varying ...

An atomic force microscope ~AFM! with an ultrasharp tip was used to directly measure the sidewall profile of InP/InGaAsP waveguide structures etched using an inductively coupled plasma reactive ion etching ~ICP-RIE! in Cl2-based plasma. A special staircase pattern was devised to allow AFM tip to access the etched sidewall of the waveguides in the normal direction. Statistical information such a...

The trade-off between the effect of leakage suppression and the increase of related optical loss due to placement of the p-doping in 1.3-1.55μm InGaAsP MQW edgeemitting lasers is detailed. The effect of the Zn doping profile on laser characteristics is illustrated by experimental results obtained for telecom lasers and high power lasers. The design approach combining broadened waveguides with p...

The integration of optical functionalities on a chip has been a long standing goal in the optical community. Given the call for more integration, Silicon-on-Insulator (SOI) is a material system of great interest. Although mature CMOS technology can be used for the fabrication of passive optical functionality, particular photonic functions like efficient light emission still require III-V semico...

The carrier dynamics in strain-induced InGaAsP/InP quantum dots (QDs) is investigated by time-resolved photoluminescence and continuous-wave photoluminescence. The stressor QDs are fabricated by depositing self-assembled InAs islands (or stressor islands) on top of a near-surface InGaAsP/InP quantum well (QW). The temporal behaviour of the QD photoluminescence transients are observed to exhibit...

Interband nonradiative Auger recombination in quantumwell InGaAsP/InP heterostructure lasers has been calculated. It is found that the Auger rate is much reduced in the quasi two-dimensional quantum-well lasers. This suggests that the temperature sensitivity of quantum-well InGaAsP lasers is much less than ordinary structures with much higher values of To at around room temperatures. A CONTINUI...

Integrated InP/InGaAsP phased-array 1x16 optical switch is fabricated and characterized for broadband WDM optical packet switching. Wavelength-insensitive operation covering the C-band and penalty-free transmission of 40-Gbps signal are demonstrated.