The purpose of this research was to suggest a junction-less strategy for vertical Tunnel Field Effect Transistor, which would increase the device's efficiency. In study, we examine similarities and differences between negative capacitor TFET vertically generated with source pocket heterostructure-based nanowire gate. And how channel transit impacts output qualities sub-100 nanometer sized devic...

In the proposed work an analytical model of a p-channel dual material gate all around tunnel FET (DMGAA-TFET) is presented and its performance is compared with the conventional GAA-TFET. The electrostatic potential profile of the model is obtained using 2-D Laplace’s solution in the cylindrical coordinate system. A quantitative study of the drain current has been carried out using electric fiel...

Abstract: In this paper, a novel tunnel field effect transistor (TFET) is introduced, thatdue to its superior gate controllability, can be considered as a promising candidate forthe conventional TFET. The proposed electrically doped heterojunction TFET(EDHJTFET) has a 3D core-shell nanotube structure with external and internal gatessurrounding the channel that employs el...

The integrity and issues related performance associated with scaling Si MOSFET channel length promotes research in new device SOI, double gate and GAA MOSFET. In this paper, we pr novel characteristic of horizontal rectangular gate MOSFETs with dual metal of gate we obtained using SILVACO TCAD tools. We will also exhibit some simulation results we obtained relating to the influence of some para...

In this paper, a new Si/SiGe heterojunction tunneling field-effect transistor with a T-shaped gate (HTG-TFET) is proposed and investigated by Silvaco-Atlas simulation. The two source regions of the HTG-TFET are placed on both sides of the gate to increase the tunneling area. The T-shaped gate is designed to overlap with N+ pockets in both the lateral and vertical directions, which increases the...

We demonstrated a nanowire gate-all-around (GAA) negative capacitance (NC) tunnel field-effect transistor (TFET) based on the GaAs/InN heterostructure using TCAD simulation. In gate stacking, we proposed tri-layer HfO2/TiO2/HfO2 as high-K dielectric and hafnium zirconium oxide (HZO) ferroelectric (FE) layer. The GAA-TFET overcomes thermionic limitation (60 mV/de...

Nanowire (NW) devices, particularly the gate-allaround (GAA) CMOS architecture, have emerged as the frontrunner for pushing CMOS scaling beyond the roadmap. These devices offer unique advantages over their planar counterparts which make them feasible as an option for 22-nm and beyond technology nodes. This paper reviews the current technology status for realizing the GAA NW device structures an...

A nanoprobe based on a single nanowire (NW) possesses substantial potential for biological and in vivo determination. With regard to intracellular detection, minimal invasion and an adjustable detection depth have become crucial challenges. Nanoprobes with small, sharp tips, and long arms are thus desired. Here, we demonstrate a general strategy to prepare a single kinked NW heterojunction with...

We present a facile CMOS-compatible fabrication of lateral gate-all-around (GAA) field effect transistors (FETs) based on concentric Si-SiO₂/N(++)Si core-multi-shell nanowires (NWs). Si-SiO₂/N(++)Si core-multi-shell NWs were prepared by sequential Si NW growth, thermal oxidation and Si deposition processes in a single chamber. The GAA NW FET was then fabricated using the Si core, SiO₂ inner-she...

This paper examines the performance of a Gate-Engineered Gate-All-Around Charge Plasma Nanowire Field Effect Transistor (GAA-DMG-GS-CP NW-FET) and implementation common source (CS) amplifier circuit. The proposed GAA-DMG-GS-CP NW-FET incorporates dual-material gate (DMG) stack (GS) as engineering techniques its analog/RF parameters are compared to those Single-Material Gate (GAA-SMG-CP device. ...