The energy level structure of a step-like GaInNAsSb/GaNAs/GaAs quantum well sQWd has been investigated by photoreflectance sPRd spectroscopy and was analyzed by theoretical calculations. In the active region of this structure, i.e., GaInNAsSb/GaNAs QW, we have observed PR resonances related higher order QW transitions in addition to the ground state transition. Based on calculations from experi...

The design of InGaN/dilute-As GaNAs interface quantum well (QW) leads to significant redshift in the transition wavelength with improvement in electron-hole wave function overlap and spontaneous emission rate as compared to that of the conventional In0.2Ga0.8N QW. By using self-consistent six-band k·p band formalism, the nitride active region consisting of 30 Å In0.2Ga0.8N and 10 Å GaN0.95As0.0...