نتایج جستجو برای: field effect transistors
تعداد نتایج: 2338988 فیلتر نتایج به سال:
In the last decade, Si(100) has been used as a suitable substrate in field effect transistors. Some issues such as leakage current and tunneling current through the ultrathin films have been increased with shrinking the electronic devices – particularly, field effect transistors – to nanoscale, which is threatening more use of Si(100). We have thus demonstrated a series of experiments to grow ...
Related Articles Charge transport in dual-gate organic field-effect transistors APL: Org. Electron. Photonics 5, 20 (2012) Top-gate thin-film transistors based on GaN channel layer Appl. Phys. Lett. 100, 022111 (2012) Charge transport in dual-gate organic field-effect transistors Appl. Phys. Lett. 100, 023308 (2012) Solid polyelectrolyte-gated surface conductive diamond field effect transistors...
It has been recently shown that manufacturing p-n-junctions, field-effect and bipolar transistors, thyristors in a multilayer structure by diffusion or ion implantation with the optimization of dopant and/or radiation defects leads to increase the sharpness of p-n-junctions (both single p-n-junctions and p-n-junctions framework their system). Due to the optimization, one can also obtain increas...
The Field Effect Transistor (FET) is today the basic element of Very Large ScaIe Integrated (VLSI) digital systems. FETs are also used in analog circuits for high frequency (microwave) applications. Different types of FETs are the Metal Oxide Semiconductor Field Effect Transistors (MOSFETs), the MEtal Semiconductor Field Effect Transistors (MESFETs) and the MOdulation Doped Field Effect Transis...
نمودار تعداد نتایج جستجو در هر سال
با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید