Wide band-gap semiconductor materials such silicon carbide (SiC), gallium nitride (GaN), and diamond (C) based electronic devices may operate at temperatures above the high temperature limit of silicon technology. Among these wide band gap materials, single crystal SiC is the most mature material at this stage. SiC has such excellent physical and chemical material properties that SiC microsyste...

Abstract There is growing interest in extreme temperature electronics to support the mission needs sense, actuate, and communicate at temperatures beyond normal range of operations commercial military applications. Reliable packaging more than 300°C has been demonstrated using ceramic multi-chip modules conventional hybrid circuit technology. This approach typically requires high NRE costs lead...

This article compares the thermomechanical behavior of 3-D inkjet-printed microelectronics devices relative to those fabricated from traditional methods. It discusses benefits and challenges in adoption additive manufacturing methods for manufacture conventional approaches. The critical issues related design reliability additively manufactured parts systems stem change process materials utilize...