smaller devices and reduced form factors with time, resulting in new challenges. Reduction in device and interconnect solder bump sizes has led to increased current density in these small solders. Higher level of electromigration occurring due to increased current density is of great concern affecting the reliability of the entire microelectronics systems. This presentation reviews electromigra...

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The effect of the microstructure on the electromigration failure development is analyzed. We investigate the influence of the statistical distribution of copper grain sizes on the electromigration time to failure distribution. Also, the effect of the microstructure on the formation and development of an electromigration-induced void is studied by simulation and the results are compared with exp...

Articles you may be interested in Influence of Cu column under-bump-metallizations on current crowding and Joule heating effects of electromigration in flip-chip solder joints Effect of void propagation on bump resistance due to electromigration in flip-chip solder joints using Kelvin structure Appl. Investigation of void nucleation and propagation during electromigration of flip-chip solder jo...

We study the behavior of a nanoparticle under electromigration on a nanopatterned surface. We show that electromigration allows one to control the wetting transitions of the nanoparticle. Suitable surface electromigration conditions to observe these transitions can be achieved with electric currents larger than 1 μA. Using kinetic Monte Carlo simulations and analytical modeling, we determine th...

Electromigration is an important failure phenomenon in ULSI. There are several underlying physical mechanisms in an electromigration process depending on the stress conditions. In this work, we use various statistical techniques to investigate the number of such mechanisms for a given set of electromigration data. The statistical distribution of each mechanism can be found and the failure units...

A multiple scattering formulation for the electromigration wind force on atoms in dilute alloys is developed. The theory describes electromigration via a vacancy mechanism. The method is used to calculate the wind valence for electromigration in various host metals having a close-packed lattice structure, namely aluminum, the noble metals copper, silver, and gold, and the 4d transition metals. ...

A kinetic analysis was formulated for electromigration enhanced intermetallic evolution of a Cu–Sn diffusion couple in the Sn-based Pb-free solder joints with Cu under bump metallurgy. The simulated diffusion couple comprised the two terminal phases, Cu and Sn, as well as the two intermetallic phases, Cu3Sn and Cu6Sn5, formed between them. The diffusion and electromigration parameters were obta...

The effect of under-bump-metallization (UBM) on electromigration was investigated at temperatures ranging from 135C to 165C. The UBM structures were examined: 5-μm-Cu/3-μm-Ni and 5 μm Cu. Experimental results show that the solder joint with the Cu/Ni UBM has a longer electromigration lifetime than the solder joint with the Cu UBM. Three important parameters were analyzed to explain the differen...

Electromigration is a major road block in the pursuit of further miniaturized electronics. In the next generation micro and sub micro electronics current density is expected to exceed 10 A/cm. In this paper an electromigration induced strain-current density model is proposed and implemented in finite element procedure for solution of boundary/initial value electromigration problems. Numerical s...