نتایج جستجو برای: diodes

تعداد نتایج: 11817  

Journal: :journal of biomedical physics and engineering 0
s a rahimi tarbiat modares university b hashemi tarbiat modares university s r mahdavi iran university of medical sciences

background: estimating dosimetric parameters for small fields under non-reference conditions leads to significant errors if done based on conventional protocols used for large fields in reference conditions. hence, further correction factors have been introduced to take into account the influence of spectral quality changes when various detectors are used in non-reference conditions at differen...

2012
Z. G. Ju S. T. Tan Z.-H. Zhang Y. Ji Z. Kyaw Y. Dikme X. W. Sun H. V. Demir

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2014
Patrick M. McBride Qimin Yan Chris G. Van de Walle

Articles you may be interested in Effect of V-defects on the performance deterioration of InGaN/GaN multiple-quantum-well light-emitting diodes with varying barrier layer thickness Three dimensional numerical study on the efficiency of a core-shell InGaN/GaN multiple quantum well nanowire light-emitting diodes Effect of an electron blocking layer on the piezoelectric field in InGaN/GaN multiple...

2015
Jin Xue Yuji Zhao Sang-Ho Oh William F. Herrington James S. Speck Steven P. DenBaars Shuji Nakamura Rajeev J. Ram

Articles you may be interested in Performance enhancement of blue light-emitting diodes with a special designed AlGaN/GaN superlattice electron-blocking layer Appl. Raman and emission characteristics of a-plane InGaN/GaN blue-green light emitting diodes on r-sapphire substrates J. Thermally stable and highly reflective AgAl alloy for enhancing light extraction efficiency in GaN light-emitting d...

1999
J. R. Jimenez P. W. Pellegrini

Lowered-barrier-height silicide Schottky diodes are desirable for obtaining longer cutoff-wavelength Si-based infrared detectors. Silicide Schottky diodes have been fabricated by the reaction of evaporated Pt and Ir films on p-Si,-.Ge, alloys with a thin Si capping layer. The onset of metal-SiGe reactions was controlled by the deposited metal thickness. Internal photoemission measurements were ...

2003
E. J. Miller D. M. Schaadt E. T. Yu J. S. Speck

An electrochemical surface treatment has been developed that decreases the reverse-bias leakage current in Schottky diodes fabricated on GaN grown by molecular-beam epitaxy ~MBE!. This treatment suppresses current flow through localized leakage paths present in MBE-grown GaN, while leaving other diode characteristics, such as the Schottky barrier height, largely unaffected. A reduction in leaka...

2013
Jian Guo Jie Xu Cheng Qian

We propose a balanced frequency tripler scheme for millimeter-wave and submillimeter-wave application, in which doublesided suspended stripline is adopted. Two arms of Schottky diodes are mounted on the upper side of the substrate, and the other two arms of diodes are mounted on the lower side. The diodes are DC biased without bypass chip capacitor, which is essential in the common used balance...

2012
Shih-Wei Tan Shih-Wen Lai

Characterization and modeling of metal-semiconductor-metal (MSM) GaAs diodes using to evaporate SiO₂ and Pd simultaneously as a mixture electrode (called M-MSM diodes) compared with similar to evaporate Pd as the electrode (called Pd-MSM diodes) were reported. The barrier height (φ(b)) and the Richardson constant (A*) were carried out for the thermionic-emission process to describe well the cur...

2015
M. Kgwadi T. D. Drysdale

We demonstrate that diode-switching can be used to introduce frequency agility into antennas produced by thermal transfer printing. Our particular example is a triangular Sierpinski fractal pattern with two PIN diodes to switch between operation optimised for the 800 MHz UHF band (diodes on) and the 2400 MHz ISM band (diodes off). Our measured results show an improvement in S11 in the UHF band ...

Journal: :نشریه دانشکده فنی 0
مرتضی شهبازی

institut des sciences et techniques nucleaires de l' universite de teheran - iran pour l'etude de l'effet du temps de recouvrement 'un tripleur de tension nous avons ete conduits a fa ire une etude theorique d'ot nous avons pu tirer une relation entre le temps de recouvrement et les differents parametres de la diode prn. ainsi nous avons montre que la rapidite d'un...

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