Beam-steering techniques are required to fully exploit terahertz imaging systems. We propose and model a device employing artificial dielectric techniques to provide a variable phase-control medium. The device consists of two interlocking artificial dielectric surfaces that are initially aligned parallel to each other. By mechanically introducing a relative tilt between the plates, a transmitte...

Radio-frequency ~rf! inductively coupled planar plasma ~ICP! provides a better way to generate spatially confined high density gas discharge plasmas for microelectronics processing. Commercial processing equipment using this technique is currently available, but is limited in size to 20 cm in diameter by problems with plasma uniformity and antenna dielectric window erosion. We have developed a ...

The effect of surface characteristics of dielectric layers on the molecular orientation and device performance of sprayed organic field-effect transistors (OFETs) obtained by a novel solvent-assisted post-treatment, called the solvent-sprayed overlayer (SSO) method, were investigated. The OFETs were fabricated by the spray method using regioregular poly(3-hexylthiophene) (RR-P3HT) as an active ...

Article history: Available online xxxx a b s t r a c t Negative bias temperature instability (NBTI) has become an important reliability concern for nano-scaled complementary metal oxide (CMOS) devices. This paper presents the effect of NBTI for a 45 nm advanced-process high-k dielectric with metal gate PMOS transistor. The device had incorporated advanced-process flow steps such as stress engin...

WDM systems create a strong need for compact wavelength multiplexing and demultiplexing devices that can be manufactured cost-effectively. We focus here on thin-film structures, as they are easy to fabricate with well-known technology. In contrast to typical dielectric interference filters though, we use group velocity effects to separate multiple beams of different wavelengths with a single mu...

Parallel plate capacitors employing Bi1.5Zn1.0Nb1.5O7 sBZNd thin films with the pyrochlore structure were fabricated on platinized sapphire substrates. The total device quality factor and capacitance were analyzed in the microwave frequency range sup to 20 GHzd by measuring reflection coefficients with a vector network analyzer. The parasitics due to the probe pads were extracted from the measu...

Ferroelectric BaTiO3/SrTiO3 with optimized c-axis-oriented multilayered thin films were epitaxially fabricated on (001) MgO substrates. The microstructural studies indicate that the in-plane interface relationships between the films as well as the substrate are determined to be (001)SrTiO3//(001)BaTiO3//(001)MgO and [100]SrTiO3//[100]BaTiO3//[100]MgO. The microwave (5 to 18 GHz) dielectric meas...

Gate-leakage reduction is the key motivation for the replacement of SiO2 with alternative gate dielectrics. 45nm gate length scaled grooved and bulk nMOSFETs are evaluated to bring out the most compatible and power saving dielectric option using Si3N4 and SiO2 using Silvaco ATLAS device simulator. At the scaled thickness, SiO2 controls the leakage better than Si3N4, whereas at increased thickne...