Effect of surface preparation on the radiation hardness of MOS devices with high dielectric constant gate dielectric of HfO2 and metal gate of TiN is studied using extreme ultra-violet (EUV) light as the radiation source. Three kinds of surface treatment including HF-last, chemical-oxidation, and rapid-thermal-oxidation were evaluated. Among them, chemical-oxidation exhibits the best radiation ...

High reliability capacitors require a dielectric layer with both high electrical resistivity and high static dielectric constant. The most commonly used material platform for low cost, base metal electrode capacitors (BME) consists of nickel electrodes and barium titanate-based dielectric layers. Barium titanate (BaTiO3) is ferroelectric material with dielectric constant that depends on factors...

The degradation of 100 nm effective channel length pMOS transistors with 14 A equivalent oxide thickness JVD Si3N4 gate dielectric under hot-carrier stress is studied. Interface-state generation is identified as the dominant degradation mechanism. Hot-carrier-induced gate leakage may become a new reliability concem. Hot-carrier reliability of 14 A Si3N4 transistors is compared to reliability of...

Degradation of 2,6-dibromophenol (2,6-DBP) in the aqueous solution was studied using dielectric barrier discharge in micro-bubbles. Experimental comparison of working gas Ar, N2, O2, and air showed that oxygen and air plasma efficiently decomposed 2,6-DBP to bromide ion, and inorganic carbon. The molecular orbital model was applied in the analysis of the degradation in electrophilic, nucleophil...

Non-Ohmic and dielectric properties of a novel CaCu3Ti4O12/Au nanocomposite were investigated. Introduction of 2.5 vol.% Au nanoparticles in CaCu3Ti4O12 ceramics significantly reduced the loss tangent while its dielectric permittivity remained unchanged. The non-Ohmic properties of CaCu3Ti4O12/Au (2.5 vol.%) were dramatically improved. A nonlinear coefficient of ≈ 17.7 and breakdown electric fi...

The capacitance and leakage current properties of multilayer La2O3/Al2O3 dielectric stacks and LaAlO3 dielectric film are investigated in this paper. A clear promotion of capacitance properties is observed for multilayer La2O3/Al2O3 stacks after post-deposition annealing (PDA) at 800 °C compared with PDA at 600 °C, which indicated the recombination of defects and dangling bonds performs better ...

In this paper we look at the effect of Fringe-Enhanced-Barrier-lowering (FEBL) for highK dielectric MOSFETs and the dependence of FEBL on various technological parameters (spacer dielectrics, overlap length, dielectric stack, S/D junction depth and dielectric thickness). We show that FEBL needs to be contained in order to maintain the performance advantage with scaled high-K dielectric MOSFETs....

A new generation of nano-additives for robust high performance nanodielectrics is proposed. It is demonstrated for the first time that mesoporous material could act as "degradation inhibitor" for polymer dielectrics to sequestrate the electrical degradation products then restrain the electrical aging process especially under high temperature conditions, which is superior to the existing additiv...

LI, WENMEI. Characterization of High-κ Gate Stacks in Metal-Oxide-Semiconductor Capacitors. (Under the direction of Dr. Dennis M. Maher) The purpose of this research has been to use off-line characterization techniques to establish material-specific properties of gate-stack constituents (i.e., high-κ dielectric stacks and electrodes) and complete gate-stack structures. Hence, the characterizati...

A unified, macroscopic, one-dimensional model is presented for the quantitative description of the process of dielectric charging in RF MEMS switches. The fidelity of the model relies upon the utilization of experimentally-obtained data to assign values to model parameters that capture the non-linear behavior of the dielectric charging process. The proposed model can be easily cast in the form ...