نتایج جستجو برای: czochralski technique

تعداد نتایج: 611832  

Journal: :Journal of physics 2021

Abstract For the first time, single crystals of undoped lithium tungstate and doped by 1.25% molybdenum were grown low-temperature-gradient Czochralski technique. The standard formation enthalpies, lattices stabilization energies, heat capacity determined in temperature range 320-997 K. lattice enthalpy dependence on Mo content was constructed.

Journal: :Modern Electronic Materials 2021

Currently there is a worldwide trend to increase the diameter of crystals grown from elemental semiconductors and semiconductor compounds. According literary data 3–5 single nowadays 4 6 inches. So far up 75 mm indium antimonide have been in Russia. Indium element base for widest field solid state electronics, i.e., optoelectronics. used fabrication range linear photodetectors photodetector arr...

Journal: Nanochemistry Research 2019

In this study, the scintillation and optical properties of pure and silver doped potassium chloride (KCl:Ag) single crystals were reported. Pure and doped KCl bulk single crystals with a good optical quality and free from cracks were grown from the melt using Czochralski technique. Different analysis methods were used to study the optical and scintillation properties of the grown crystals. The ...

2010
A. S. Solntsev A. N. Penin

We present a method of measurement of the extraordinary refractive index dispersion in MIR for periodically and aperiodically poled nonlinear crystals with unknown or uncertain periods. The method is based on the spontaneous parametric down-conversion and is useful for the crystals with domain structure formed directly in the process of growth by Czochralski technique. As an example we measure ...

1997
U. Wahl A. Vantomme J. De Wachter R. Moons G. Langouche J. G. Marques J. G. Correia

We report on the lattice location of Er in Si using the emission channeling technique. The angular distribution of conversion electrons emitted by the decay chain 167Tm st1y2 ­ 9.25 dd ! 167mEr s2.27 sd was monitored with a position-sensitive detector following room temperature implantation and annealing up to 950 ±C. Our experiments give direct evidence that Er is stable on tetrahedral interst...

2016
Stephen J. Beecher James A. Grant-Jacob Tina L. Parsonage Ping Hua Jacob I. Mackenzie David P. Shepherd Robert W. Eason

We present our recent advances in the use of pulsed laser deposition (PLD) to fabricate active gain elements for use as amplifiers and laser oscillators. Record output powers exceeding 16 W and slope efficiencies of 70% are reported for optimized epitaxial growth of Yb(7.5%):YAG on to YAG substrates. We show for the first time that the performance of PLD material can meet or even exceed that of...

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