نتایج جستجو برای: buried layer

تعداد نتایج: 292998  

In this paper, for the first time, an analytical equation for threshold voltage computations in silicon-on-diamond MOSFET with an additional insulation layer is presented; In this structure, the first insulating layer is diamond which covered the silicon substrate and second insulating layer is SiO2 which is on the diamond and it is limited to the source and drain on both sides. Analytical solu...

Journal: :Geophysical Research Letters 2010

Imtiaz, B., Kashifa Naghma, W., Nasir, H.N., Sikender, H., Zehra, K.,

The snail’s specie, Oncomelania quadrasi, is found abundantly in fresh water fish ponds of Punjab. It is an intermediate carrier / host of various digenetic trematode parasites which causes many serious fish diseases in aquaculture ponds. The purpose of this study was targeted for controlling these snails in aquatic environments through chemical control strategies using copper sulfate as an era...

2005
P. C. Chu

Sidescan sonar detects objects buried in the seafloor through generating images of ordnance such as seamine buried in sediments. The sonar operates by illuminating a broad swath of the seabed using a line array of acoustic projectors while acoustic backscattering from the illuminated sediment volume is measured. The effect of suspended sediment on the sonar imagery depends on the volume scatter...

Journal: :Microelectronics Reliability 2011
Mehdi Saremi Behzad Ebrahimi Ali Afzali-Kusha Saeed Mohammadi

In this paper, a near-triangular buried-oxide partial silicon-on-insulator (TB-PSOI) lateral double-diffused MOS field-effect transistor is proposed. The electric field and electrostatic potential in this structure are modified by the gradual buried-oxide thickness increase. The modification includes the addition of a new peak in the electric field in comparison to that of the conventional PSOI...

2015
Manel Souaf Mourad Baira Olfa Nasr Mohamed Helmi Hadj Alouane Hassen Maaref Larbi Sfaxi Bouraoui Ilahi

This work reports on theoretical and experimental investigation of the impact of InAs quantum dots (QDs) position with respect to InGaAs strain reducing layer (SRL). The investigated samples are grown by molecular beam epitaxy and characterized by photoluminescence spectroscopy (PL). The QDs optical transition energies have been calculated by solving the three dimensional Schrödinger equation u...

2015
F. XIONG C. C. AHN T. VREELAND FULTZ T. A. TOMBRELLO

We have studied the formation of buried oxide in MeV oxygen implanted Si. A continuous oxide layer is formed in the samples implanted with 2xl018 /cm2 oxygen and annealed at 1300° C. The microstructures are studied by cross-sectional transmission electron microscopy and high resolution electron microscopy. Chemical information was obtained by electron energy loss spectroscopy. The effects of im...

2009
P Alonso-González L González D Fuster J Martín-Sánchez Yolanda González

In this work, we study the top surface localization of InAs quantum dots once capped by a GaAs layer grown by molecular beam epitaxy. At the used growth conditions, the underneath nanostructures are revealed at the top surface as mounding features that match their density with independence of the cap layer thickness explored (from 25 to 100 nm). The correspondence between these mounds and the b...

2004
Yi-Shiuan Lin Chien-Ching Chiu Yu-Shu Lee

The imaging of an imperfectly conducting cylinder buried in a three-layer structure by the genetic algorithm is investigated. An imperfectly conducting cylinder of unknown shape and conductivity buried in the second layer scatters the incident wave from the first layer or the third layer. We measure the scattered field in the first and third layers. Based on the boundary condition and the recor...

1999
Y. C. Chen P. K. Bhattacharya

We have used the double-crystal x-ray rocking curve technique to determine lattice constant, strain relaxation, thickness, and critical thickness of a thin In,Ga,+As layer embedded in GaAs. In this work we have measured and analyzed x-ray data over a wide scan angle ( -2.00). This allows the simultaneous determination of buried layer thickness and strain. The measurement results were analyzed b...

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