نتایج جستجو برای: amorphous semiconductor

تعداد نتایج: 85726  

2000
M. Amman P. N. Luke Ernest Orlando

Gamma-ray imaging with position-sensitive germanium detectors offers the advantages of excellent energy resolution, high detection efficiency, and potentially good spatial resolution. The development of the amorphous-semiconductor electrical contact technology for germanium detectors has simplified the production of these position-sensitive detectors and has made possible the use of unique dete...

2009
Yana Vaynzof Yevgeni Preezant Nir Tessler

A general representation of the current in an amorphous semiconductor pn diode is developed. This expression is applied to examples of density of states functions exponential, Gaussian, and Gaussian with exponential tail commonly found in conjugated molecules and other amorphous materials. We find that the ideality factor could be voltage dependent and that its functional form is closely relate...

Journal: :Physical review letters 2013
M C Ridgway T Bierschenk R Giulian B Afra M D Rodriguez L L Araujo A P Byrne N Kirby O H Pakarinen F Djurabekova K Nordlund M Schleberger O Osmani N Medvedev B Rethfeld P Kluth

Ion tracks formed in amorphous Ge by swift heavy-ion irradiation have been identified with experiment and modeling to yield unambiguous evidence of tracks in an amorphous semiconductor. Their underdense core and overdense shell result from quenched-in radially outward material flow. Following a solid-to-liquid phase transformation, the volume contraction necessary to accommodate the high-densit...

Journal: :Inf. Sci. 2000
Holger Kirschner Reinald Hillebrand

We present a new neural network-based method of image processing for determining the local composition and thickness of III±V semiconductors in high resolution electron microscope images. This is of great practical interest as these parameters in ̄uence the electrical properties of the semiconductor. Neural networks suppress correlated noise from amorphous object covering and distinguish between...

Journal: :Advanced materials 2010
Sylvain Danto Fabien Sorin Nicholas D Orf Zheng Wang Scott A Speakman John D Joannopoulos Yoel Fink

The in situ crystallization of the incorporated amorphous semiconductor within the multimaterial fiber device yields a large decrease in defect density and a concomitant five-order-of-magnitude decrease in resistivity of the novel metal-insulator-crystalline semiconductor structure. Using a post-drawing crystallization process, the first tens-of-meters-long single-fiber field-effect device is d...

Journal: :J. Sensors 2009
Andreas Helwig Gerhard Müller Giorgio Sberveglieri Martin Eickhoff

The present paper compares three different kinds of semiconductor gas sensing materials: metal oxides (MOX), hydrogenterminated diamond (HD), and hydrogenated amorphous silicon (a-Si:H). Whereas in MOX materials oxygen is the chemically reactive surface species, HD and a-Si:H are covalently bonded semiconductors with hydrogenterminated surfaces. We demonstrate that these dissimilar semiconducto...

2008
Daniel Frisbie

Polycrystalline organic semiconductor films play a central role in organic electronics because their inherent order, relative to amorphous films, facilitates more efficient charge transport. Carrier mobilities in crystalline organic semiconductors are generally at least a factor of one hundred greater than in their amorphous counterparts, which is attractive for certain device applications, suc...

2011
Steve Arscott

By linking semiconductor physics and wetting phenomena a brand new effect termed "photoelectrowetting-on-semiconductors" is demonstrated here for a conducting droplet resting on an insulator-semiconductor stack. Optical generation of carriers in the space-charge region of the underlying semiconductor alters the capacitance of the liquid-insulator-semiconductor stack; the result of this is a mod...

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