We report the intrinsic and extrinsic electrical characteristics of advanced multilayer amorphous silicon (a-Si:H) thin-film transistor (TFT) with dual amorphous silicon nitride (a-SiNX:H) and a-Si:H layers. The thickness effect of the high electronic quality a-Si:H film on the transistor’s electrical property was investigated; with increasing film thickness, both field-effect mobility and subt...

Selective formation of amorphous, nematic (N), and beta phases in poly(9,9-di-n-octyl-2,7-fluorene) (PFO) films was achieved via judicious choice of process parameters. Phase structure and film morphology were carefully examined by means of X-ray diffraction as well as electron microscopy. "Amorphous" thin films were obtained by quick evaporation of solvent. Slow solvent removal during film for...

Tungsten oxide (WOx) thin film, which is well known as an electrochromic display, was deposited on the ITO film coated flexible substrates using the RF magnetron sputtering method. Phenomena of processing plasmas, the film quality and the electrochromic properties of deposited WO3 thin film have been studied as parameters of a gas pressure and gas mixture. Experimental results suggest that depo...

The stability of Ni, Cu, Mo and Au transmission electron microscope (TEM) grids coated with ultra-thin amorphous carbon (alpha-C) or silicon monoxide film is examined by in-situ heating up to a temperature in the range 500-850 degrees C in a transmission electron microscope. It is demonstrated that some grids can generate nano-particles either due to the surface diffusion of metal atoms on amor...

Using a masked hydrogen plasma treatment to spatially control the crystallization of amorphous silicon to polycrystalline silicon in desired areas, amorphous and polycrystalline silicon thin-film transistors (TFTs) with good performance have been integrated in a single film of silicon without laser processing. Both transistors are top gate and shared all process steps. The polycrystalline silic...

Selective exposure of a hydrogenated amorphous silicon ~a-Si:H! film to a room-temperature hydrogen plasma using a patterned masking layer and a subsequent anneal at 600 °C, results in patterned polycrystalline and amorphous silicon regions. However, most of the hydrogen in the amorphous silicon is lost, leading to severe degradation in its properties. In this letter, we report the rehydrogenat...

Aluminum nitride (AlN) thin films have potential applications in microelectronic and optoelectronic devices. In this study, AlN thin films with different thicknesses were deposited on silicon substrate by single ion beam sputtering method. The X-ray diffraction (XRD) spectra revealed that the structure of films with thickness of - nm was amorphous, while the polycrystalline hexagonal AlN with a...

ZnO thin films deposited on various substrates were characterized by slow positron implantation spectroscopy (SPIS) combined with X-ray diffraction (XRD). All films studied exhibit wurtzite structure and crystallite size 20-100 nm. The mosaic spread of crystallites is relatively small for the films grown on single crystalline substrates while it is substantial for the film grown on amorphous su...

Growth mechanism for synthesizing PVD based Graphene using Amorphous Carbon, catalyzed by Copper is investigated in this work. Different experiments with respect to Amorphous Carbon film thickness, annealing time and temperature are performed for the investigation. Copper film stress and its effect on hydrogen diffusion through the film grain boundaries are found to be the key factors for the g...

Introduction to Thin Film Transistors reviews the operation, application and technology of the main classes of thin film transistor (TFT) of current interest for large area electronics. The TFT materials covered include hydrogenated amorphous silicon (a-Si:H), poly-crystalline silicon (poly-Si), transparent amorphous oxide semiconductors (AOS), and organic semiconductors. The large scale manufa...