We present a method of noise suppression of laser diodes by an unbalanced Michelson fiber interferometer. The unstabilized laser source is represented by compact planar waveguide external cavity laser module, ORIONTM (Redfern Integrated Optics, Inc.), working at 1540.57 nm with a 1.5-kHz linewidth. We built up the unbalanced Michelson interferometer with a 2.09 km-long arm based on the standard...

The availability of silicon photonic integrated circuits (ICs) in the 2-4 μm wavelength range enables miniature optical sensors for trace gas and bio-molecule detection. In this paper, we review our recent work on III-V-on-silicon waveguide circuits for spectroscopic sensing in this wavelength range. We first present results on the heterogeneous integration of 2.3 μm wavelength III-V laser sour...

A theory is presented for the frequency dependence of the power spectrum of photon current fluctuations originating from a disordered medium. Both the cases of an absorbing medium (“grey body”) and of an amplifying medium (“random laser”) are considered in a waveguide geometry. The semiclassical approach (based on a Boltzmann-Langevin equation) is shown to be in complete agreement with a fully ...

A guided-mode-resonance device for both narrow-band retroreflection and waveguide input coupling was designed fabricated operation wavelength of 1550 nm. It consists a focusing grating coupler (FGC) integrated in cavity resonator constructed by pair distributed Bragg reflectors (DBRs) on reflection substrate. The size the FGC 31 × 20 μm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:...

The principle of all-silicon Raman lasers for an output wavelength of 1.3 μm is presented, which employs quasi-phase-matched structures and resonators to enhance the output power. 1.3-μm laser beams for GE-PONs in FTTH systems generated from a silicon device are very important because such a silicon device can be monolithically integrated with the silicon planar lightwave circuits (Si PLCs) use...

Figure 2 shows the configuration of the blue laser developed here. A 976-nm semiconductor laser is employed as fundamental lightwave generator, and after wavelength stabilization using fiber Bragg grating (FBG), the source light is directly coupled to a SHG wavelength conversion device of planar waveguide type. Because, in single-longitudinal-mode operation, the 976-nm semiconductor laser is su...

The intensity dynamics of a five-emitter laser array subject to a linearly decreasing injection current are examined numerically. We have matched the results of the numerical model to an experimental AlGaAs quantum-dot array laser and have achieved the same robust oscillatory power output with a nearly π phase shift between emitters that was observed in experiments. Due to the linearly decreasi...

We report our recent work on obtaining on-chip lasers in crystalline double tungstate waveguides using focused-ion-beam (FIB) nanostructuring. Photonic cavity structures were defined by forming deeply etched Bragg gratings in KGdxLu1-x(WO4)2:Yb 3+ using FIB milling. The FIB milling procedure was optimized and gratings more than 4 μm in depth with an improved total sidewall angle of about 5 wer...

Terahertz pulses trapped as surface waves on a wire waveguide can be flexibly transmitted and focused to sub-wavelength dimensions by using, for example, a tapered tip. This is particularly useful for applications that require high-field pulses. However, the generation of strong terahertz surface waves on a wire waveguide remains a challenge. Here, ultrafast field propagation along a metal wire...

Ahstruct-We preseni a formalism for analyzing laser resonators which possdss nonplanar mirrors and iateral waveguiding [e.g., an unstable resonator semiconductor laser (URSL)]. The electric field is expdnded iii lateral modes of the complex-iridex waveguide and is required to rbproduce itself after, one roundtrip of the cavity. We show how the waveguide modes, their gain and loss, and hence the...