This paper presents an original design of chemical sensors with an integrated microfluidic channel. Targeted applications are pH-meters devices. The integration of the microfluidic channel allows decreasing the volume required for each measurement. The sensing part of the device consists of a field effect transistor with a suspended gate directly performed above the fluidic channel. Chemicals u...

This report describes the class of static translinear circuits, which are capable of accurately implementing a wide range of static nonlinear relationships in the current signal domain, such as products, quotients, fixed power-law relationships, vector magnitude, and rational functions. After a brief historical account of the emergence of the class of translinear circuits, we examine the repres...

This chapter shows a minimum-width transistor placement method which is applicable to CMOS cells in presence of non-dual P and N type transistors, whereas the cell layout synthesis methods explained in the previous chapters are only for dual cells. This chapter only targets the minimum-width transistor placement, and does not take the intra-cell routings into consideration. The proposed method ...

There are two types of field-effect transistors, the Junction Field-Effect Transistor (JFET) and the “Metal-Oxide Semiconductor” Field-Effect Transistor (MOSFET), or Insulated-Gate Field-Effect Transistor (IGFET). The principles on which these devices operate (current controlled by an electric field) are very similar — the primary difference being in the methods by which the control element is ...

A novel method for the reduction of subthreshold slope below the room-temperature Boltzmann limit of 60 mV/dec for a field-effect transistor based on negative differential capacitance is proposed. This effect uses electric field induced electrostriction of a piezoelectric gate barrier of the transistor. The mechanism amplifies the internal surface potential over the applied gate voltage. This i...

Multiple supply voltages, multiple transistor thresholds and transistor sizing could be used to reduce the power dissipation of digital blocks. This paper presents a framework for evaluating the effectiveness of each of these approaches independently and in conjunction with each other. Results show the advantages of multiple supply, transistor sizing, and multiple threshold can be compounded to...

A simple method for transistor DC parameter extraction is presented, where the self-heating of the transistor is taken into account. The thermal behaviour of the transistor is modelled using a single thermal resistance, whose value is extracted simultaneously with the electrical parameters. When pulsed measurements are performed the usage of the thermal resistance, as an effective thermal resis...

Graphene, after its first production in 2004 have received lots of attentions from researchers because of its unique properties. High mobility, high sensitivity, high selectivity and high surface area make graphene excellent choice for bio application. One of promising graphene base device that has amazingly high sensitivity is graphene field-effect transistor (GFET). This review selectively su...

An original scheme for constructing an ultra-wideband single-transistor generator of noise-like oscillations the microwave range wavelengths was proposed. The contains inertial converter output signal a nonlinear amplifier with positive feedback, which modulates supply voltage active element (transistor). experimental model chaotic based on powerful domestic transistor 2T982A-2 operating in sma...

There are two types of field-effect transistors, the Junction Field-Effect Transistor (JFET) and the “Metal-Oxide Semiconductor” Field-Effect Transistor (MOSFET), or Insulated-Gate Field-Effect Transistor (IGFET). The principles on which these devices operate (current controlled by an electric field) are very similar — the primary difference being in the methods by which the control element is ...