Strained-superlattice photocathodes based on InGaP/GaAs were investigated. The photocathode performance is found highly dependent on the superlattice parameters. The electron confinement energy in superlattice appears important.

Consider a thin film resting on a relatively thick substrate. When the substrate is subjected to an axial strain transverse cracks, normal to the direction, of the applied strain may appear in the film. It is observed that, for a given strain, the spacing between such cracks is uniform, with a clearly identifiable characteristic length scale that can be used to provide bounds on the spacing. Fu...

The new mechanism for relaxation of misfit stresses in nanoislands (quantum dots) is suggested and theoretically examined which is the formation of partial misfit dislocations. The parameters of nanoislands are estimated at which the generation of partial misfit dislocations is energetically favorable, with emphasis on the case of Ge/Si nanoislands. Different dislocation structures are shown to...

A variational model for epitaxially strained films accounting for the presence of dislocations is considered. Existence, regularity and some qualitative properties of solutions are addressed.

The first successful asymmetric transfer of rhodium-alkynyl species to symmetrical strained alkenes has been realized starting from bicyclic hydrazines and alkynylboronic esters.

One-pot, multi-molecular macrocyclization allows the highly selective preparation of strained macrocyclic aromatic hexamers structurally stabilized by an inward-pointing continuous hydrogen-bonding network.

A variational model for epitaxially strained films accounting for the presence of dislocations is considered. Existence, regularity and some qualitative properties of solutions are addressed.

A strained 1-phenyl-2,3-dimethylphosphirene undergoes anionic ring-opening polymerization upon initiation with n-butyl lithium at ambient temperature to yield polyvinylenephosphine, an unsaturated organophosphorus polymer.

We report room temperature electroluminescence of tensile-strained germanium microdisks. The strain is transferred into the microdisks using silicon nitride stressors. Carrier injection is achieved with Schottky contacts on n-type doped germanium. We show that a biaxial tensile-strain up to 0.72% can be transferred by optimizing the carrier injection profile. The transferred strain is measured ...