− The emissivity behaviour of a silicon wafer under various conditions was theoretically and experimentally investigated. As a result, the quantitative relationship between the ratio of p-polarized radiance to spolarized one, and polarized emissivities was obtained irrespective of the emissivity change of wafers due to the oxide film thickness under the wide variations of resistivity. Based on ...

We present an integration approach of a CMOS biosensor into a polymer based microfluidic environment suitable for mass production. It consists of a wafer-level-package for the silicon die and laser bonding process promoted by an intermediate hot melt foil to attach the sensor package to the microfluidic chip, without the need for dispensing of glues or underfiller. A very good condition of the ...

Goniometric time-domain spectroscopy (GTDS), employing an ultrashort electromagnetic (EM) pulse technique, has been developed for measuring the dielectric constant of thin films in a broad band of gigahertz to terahertz. An ultrafast optoelectronic system, including an emitter and a detector unit, is constructed with a –2 goniometer. A silicon wafer was analyzed as the reference substrate mater...

We experimentally demonstrate DC functionality of graphene-based hot electron transistors, which we call graphene base transistors (GBT). The fabrication scheme is potentially compatible with silicon technology and can be carried out at the wafer scale with standard silicon technology. The state of the GBTs can be switched by a potential applied to the transistor base, which is made of graphene...

An electrochemical etching technique has been developed that provides continuous control over the porosity of a porous silicon layer as a function of etching depth. Thin films with engineered porosity gradients, and thus a controllable gradient in the index of refraction, have been used to demonstrate broadband antireflection properties on silicon wafer and solar cell substrates. A simulation w...

We present the hetero-epitaxy of III-V materials on 200 mm Silicon wafers by MOCVD. A Ge layer is first grown on the silicon wafer by a two-step process, allowing a lattice matched GaAs layer to be grown on top. Anti-phase boundaries formation are avoided by using a high growth temperature and an arsine partial pressure above 5 mbar during the nucleation of the GaAs layer. The resulting GaAs vi...

A full-field optical technique capable of measuring angular deflections of light rays reflected off specularly reflective planar surfaces is developed. The method is aided by 2D digital image correlation to measure angular deflection of light rays. The principle of the method is described and the governing equations that relate light ray deflections to surface slopes are presented. The method i...

In the past few years, Rapid Thermal Processes (RTP) have gained acceptance as mainstream technology for semi-conductors manufacturing. These processes are characterized by a single wafer processing with a very fast ramp heating of the silicon wafer (up to 200C/sec). The single wafer approach allows for faster wafer processing and better control of process parameters on the wafer. As feature si...

In this paper we present the first investigation of a batch method for folding of threedimensional micrometer-sized silicon nitride structures by capillary forces. Silicon nitride tubes have been designed and fabricated using DRIE at the center of the planar origami patterns of the structures. Water is brought to the structures by pumping the liquid through the wafer via those tubes. Isolated m...

A silicon modulator with microring array assisted MZI is experimentally demonstrated on silicon-on-insulator wafer through CMOS-compatible process. The footprint of the whole modulator is about 600 μm(2). With forward-biased current-driven p-n junction, the 3-dB modulation bandwidth is ~2GHz. Furthermore, the impact of ambient temperature is minified with the help of MZI. Within temperature ran...