Articles you may be interested in Increase of mobility in dual gate amorphous-InGaZnO4 thin-film transistors by pseudo-doping Appl. Effect of hydrogen incorporation on the negative bias illumination stress instability in amorphous In-Ga-Zn-O thin-film-transistors Suppress temperature instability of InGaZnO thin film transistors by N2O plasma treatment, including thermal-induced hole trapping ph...

We investigate the intrinsic performance of vertical and lateral graphene-based heterostructure field-effect transistors, currently considered the most promising options to exploit graphene properties in post-CMOS electronics. We focus on three recently proposed graphene-based transistors, that in experiments have exhibited large current modulation. Our analysis is based on device simulations i...

This paper reports the radio frequency (RF) performance of InAs nanomembrane transistors on both mechanically rigid and flexible substrates. We have employed a self-aligned device architecture by using a T-shaped gate structure to fabricate high performance InAs metal-oxide-semiconductor field-effect transistors (MOSFETs) with channel lengths down to 75 nm. RF measurements reveal that the InAs ...

Local long-term adaptation is a well-known feature of the synaptic junctions in nerve tissue. Neuroscientists have demonstrated that biology uses local adaptation both to tune the performance of neural circuits and for long-term learning. Many researchers believe it is key to the intelligent behavior and the efficiency of biological organizms. Although engineers use adaptation in feedback circu...

Related Articles Low-temperature pseudo-metal-oxide-semiconductor field-effect transistor measurements on bare silicon-oninsulator wafers Appl. Phys. Lett. 101, 092110 (2012) High output current in vertical polymer space-charge-limited transistor induced by self-assembled monolayer Appl. Phys. Lett. 101, 093307 (2012) Influence of dielectric-dependent interfacial widths on device performance in...

Heterostructure engineering of atomically thin two-dimensional materials offers an exciting opportunity to fabricate atomically sharp interfaces for highly tunable electronic and optoelectronic devices. Here, we demonstrate abrupt interface between two completely dissimilar material systems, i.e, GaTe-MoS2 p-n heterojunction transistors, where the resulting device possesses unique electronic pr...

Radio-frequency (RF) electronics, which combine passive electromagnetic devices and active transistors to generate and process gigahertz (GHz) signals, provide a critical basis of ever-pervasive wireless networks. While transistors are best realized by top-down fabrication, relatively larger electromagnetic passives are within the reach of printing techniques. Here, direct writing of viscoelast...