نتایج جستجو برای: pseudomorphic

تعداد نتایج: 349  

1998
M. W. Dashiell L. V. Kulik

Pseudomorphic Si12yCy alloys on silicon ~100! were grown by molecular beam epitaxy using a single effusion source of silicon contained in a graphite crucible, producing carbon concentrations of y50.008. The behavior of carbon incorporation using this source was studied as a function of growth temperature using x-ray diffraction and infrared spectroscopy, and was compared to previous studies, wh...

Journal: :Microelectronics Journal 2004
Jorge M. García Daniel Granados Juan Pedro Silveira Fernando Briones

In segregation during InAs growth on GaAs(001) is studied using a real time, in situ technique capable of measuring sample accumulated stress. A 50% surface In segregation of liquid-like stress free matter is deduced. A picture of growth below critical thickness for quantum dot formation is discussed on the basis of the equilibrium between pseudomorphic InAs and liquid In dominated by the stres...

2017
D. Mark Riffe N. D. Shinn B. Kim K. J. Kim T. H. Kang D. M. Riffe

We have measured W 4f7/2 core-level photoemission spectra from W(110) in the presence of Pd overlayers for coverages up to ∼1 pseudomorphic monolayer (ML). At coverages close to 0.05 ML a striking change in the W core-level spectrum is observed, which we interpret as indicating a long-range lateral effect of 2D Pd islands upon the W electronic structure in both the first and second W layers. As...

2014
Amr Hassan Yassin

neural network algorithms have been applied to a variety of areas of engineering and microwave structures. Neural networks are also able to model nonlinear relations between different data sets. Owing to this feature, an introduced neural network model (INN) based on particle swarm optimization (PSO) training algorithm (INN-PSO) is presented for pseudomorphic high electron mobility transistor (...

1998
Sharief Babiker Asen Asenov Nigel Cameron Steven P. Beaumont John R. Barker

A comprehensive RF analysis technique based on ensemble Monte Carlo (EMC) simulation of compound FET’s with realistic device geometry is presented. Y -parameters are obtained through Fourier transformation of the EMC transients in response to small changes in the terminal voltages. The terminal currents are statistically enhanced and filtered to allow for reliable y-parameters extraction. Impro...

1994
C. Ratsch A. Zangwill P. Šmilauer

Monte Carlo simulations of an atomistic solid-on-solid model are used to study the effect of lattice misfit on the distribution of two-dimensional islands sizes as a function of coverage Θ in the submonolayer aggregation regime of epitaxial growth. Misfit promotes the detachment of atoms from the perimeter of large pseudomorphic islands and thus favors their dissolution into smaller islands tha...

2010
Jayesh Nath

An analytic technique and figureof-merit (Fnm) for the trade-off of noise measure and mismatch loss in the design of low noise amplifier is presented. The trade-off between various design parameters as a function of inductive source degeneration is evaluated using the developed design curve. It is shown that the design curves are unique to the selected device. Several devices demonstrated condi...

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