This special section contains about 27 papers, which cover the fields of MOSFET technology, Emerging technology, III-V semiconductor technology, Nanoscale device technology Memory technology and Circuit technology. Recent years, innovations of electronic devices are strongly required for the various electronics fields such as information processing, communications, sensor electronics and power ...

Based on an active transmission line concept and twodimensional (2-D) device simulations, an accurate and computationally efficient simulation technique for high frequency noise performance of MOSFETs is demonstrated. Using a Langevin stochastic source term model and small-signal equivalent circuit of the MOSFET, three intrinsic noise parameters ( , , and ) for the drain noise and induced gate ...

In this paper, we present a simple and accurate MOSFET channel charge model for device modeling in circuit simulation. The model can guarantee good continuities and smooth transitions of charge, capacitance, current, and transconductance from subthreshold to strong inversion with a unified analytical expression, and agrees with the experimental data well at various process and bias conditions f...

This paper proposes SiC MOSFET gate ageing-laws under repetitive short-circuit stress. Based on analytical studies, physical forms and preconditioning data, numerical fitting based stress variables ΔTj, TPulse Gate Damage % Esc is proposed. Accuracy prediction capabilities of have been evaluated compared. Resulting in suggesting a new ageing-law ΔTAl_Top metal-source. one gives the best accurac...

Analog switches, which are known to be the bottle-neck for reducing the supply voltage, are analyzed. MOSFET transistors with channel lengths shorter than the minimum feature size (L 0 ) in a given technology are proposed for use as switches operated at a low supply voltage. These MOSFETs have lower threshold voltage and higher punchthrough currents compared to a transistor of L 0 length (due t...

These impedance conditions correspond to the class F operating condition, the ideal voltage and current shapes for which are shown in Figure 1. Here a sum of odd harmonics produces a square voltage waveform and a sum of even harmonics approximates a half-sinusoidal current shape. In reality, both extrinsic and intrinsic transistor parasitic elements have a substantial effect on the efficiency, ...

This paper proposes a new floating gate MOSFET (FGMOS) based voltage-controlled grounded resistor. In the proposed circuit FGMOS operating in the ohmic region is linearized by another conventional MOSFET operating in the saturation region. The major advantages of FGMOS based voltage-controlled grounded resistor (FGVCGR) are simplicity, low total harmonic distortion (THD), and low power consumpt...

Double gate MOSFET is widely used for sub-50nm technology of transistor design .They have immunity to short channel effects, reduced leakage current and high scaling potential. The single gate Silicon–on-insulator (SOI) devices give improved circuit speed and power consumption .But as the transistor size is reduced the close proximity between source and drain reduces the ability of the gate ele...

The recently proposed BSIM6 bulk MOSFET compact model is set to replace the hitherto widely used BSIM3 and BSIM4 models as the de-facto industrial standard. Unlike its predecessors which were threshold voltage based, the BSIM6 core is charge based and thus physically continuous at all levels of inversion from linear operation to saturation. Hence, it lends itself conveniently for the use of a d...