Catalyst-free InP nanowires were grown on Si (100) substrates by low-pressure metal organic chemical vapor deposition. The different stages of nanowire growth were investigated. The scanning electron microscopy images showed that the density of the nanowires increased as the growth continued. Catalyzing indium droplets could still be fabricated in the nanowire growing process. X-ray diffraction...

The growth and thermal conductivity of InAs quantum dot (QD) stacks embedded in GaInAs matrix with AlAs compensating layers deposited on (113)B InP substrate are presented. The effect of the strain compensating AlAs layer is demonstrated through AFM and X-Ray diffraction structural analysis. The thermal conductivity (2.7W/mK at 300K) measured by the 3w method reveals to be clearly reduced in co...

We describe high efficiency thin-film InP solar cells that utilize a periodic array of TiO2 nanocylinders. These nanophotonic resonators are found to reduce the solar-weighted average reflectivity of an InP solar cell to ~1.3%, outperforming the best double-layer antireflection coatings. The coupling between Mie scattering resonances and thin-film interference effects accurately desc...

Radiative corrections to QCD amplitudes in the quasi-multi-Regge kinematics are interesting in particular since the Reggeized form of these amplitudes is used in the derivation of the NLO BFKL. This form is a hypothesis which must be at least carefully checked, if not proved. We calculate the radiative corrections in the one-loop approximation using the s-channel unitarity. Compatibility of the...

Activation of p type III-V semiconductors with Cesium and Oxygen has been widely used to prepare Negative Electron Affinity (NEA) photocathodes. However, the nature of the chemical species on the surface after the activation is not well-understood. In this study, InP NEA photocathodes activated with Cesium and Oxygen are studied using Synchrotron Radiation Photoelectron Spectroscopy, also calle...

The intermixing characteristics of three widely used combinations of InP based quantum wells (QW) are investigated using the impurity-free vacancy disordering (IFVD) technique. We demonstrate that the bandgap energy shift is highly dependent on the concentration gradient of the as-grown wells and barriers, as well as the thickness of the well, with thinner wells more susceptible to interdiffusi...

The depth profiles measured by secondary-ion mass spectrometry of 56 MeV oxygen ions implanted into Si, GaAs, and InP are reported. Most of the oxygen is contained within a sharp (full wi.dth at half maximum -211m) non-Gaussian profile centered at Jlm in GaAs, 36 }lm in InP, and 46 {-lm in Si, with the distribution skewed towards greater depths. The experimental projected ranges appear to be 10...

The reconstructions of the InP~001! surface prepared by molecular beam epitaxy have been studied with in situ reflection high-energy electron diffraction ~RHEED! and scanning tunneling microscopy ~STM!. The growth chamber contains a highly accurate temperature measurement system and uses a solid-source, cracked phosphorus, valved effusion cell. Five InP~001! reconstructions are observed with RH...

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Using Hellmann-Feynman molecular-dynamics simulations, we have investigated interactions of firstrow elements with the (110) surfaces of GaAs and InP. We find that these atoms prefer to occupy subsurface sites. The open structure of the tetrahedrally bonded GaAs and InP, together with the small sizes of the first-row elements, makes it relatively easy for these atoms to move beneath the surface...