In this paper, we present the characteristics of high-performance strain-compensated MOCVD-grown 1200-nm InGaAs and 1300-nm InGaAsN quantum-well (QW) lasers using AsH3 and U-Dimethylhydrazine as the group V precursors. The design of the InGaAsN QW active region utilizes an In-content of approximately 40%, which requires only approximately 0.5% N-content to realize emission wavelengths up to 131...

This study presents the fabrication and improved properties of an AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor (MOS-PHEMT) using liquid phase deposited titanium dioxide (LPD-TiO₂) as a gate dielectric. Sulfur pretreatment and postoxidation rapid thermal annealing (RTA) were consecutively employed before and after the gate dielectric was deposited to fi...

We report, for the first time, a prominent but fully reversible enhancement in transconductance after applying positive gate stress to self-aligned InGaAs MOSFETs. We attribute this to electric-field-induced migration of fluorine ions (F-) introduced during the RIE gate recess process. Fis known to passivate Si donors in InAlAs. In our device structure, an n-InAlAs ledge facilitates the link fr...

The integration of optical interconnects with silicon-based electronics can address the growing limitations facing chip-scale data transport as microprocessors become progressively faster. However, until now, material lattice mismatch and incompatible growth temperatures have fundamentally limited monolithic integration of lasers onto silicon substrates. Here, we use a novel growth scheme to ov...

Impurity-free disordering IFD of the InAs quantum dots QDs capped with either an InP layer or an InGaAs/ InP bilayer is studied. The samples are coated with a SiO2 or TiO2 dielectric layer followed by rapid thermal annealing at 700, 750, 800, and 850 °C for 30 s. A large differential energy shift of 157 meV is induced by SiO2 in the QDs capped with an InGaAs/ InP bilayer. Contrary to the report...

Interface-formation processes in atomic layer deposition (ALD) of Al₂O₃ on InGaAs surfaces were investigated using on-line Auger electron spectroscopy. Al₂O₃ ALD was carried out by repeating a cycle of Al(CH₃)₃ (trimethylaluminum, TMA) adsorption and oxidation by H₂O. The first two ALD cycles increased the Al KLL signal, whereas they did not increase the O KLL signal. Al₂O₃ bulk-film growth sta...

InAlAs/n+-InGaAs HFET’s have demonstrated a high breakdown voltage in spite of their narrow channel bandgap. In order to understand this unique feature, we have canied out a systematic study in a range of temperatures around room-temperature. We find that for HFET’s with L ~ = 1 . 9 pm, breakdown is drain-gate limited and is a two-step process. First, electrons are emitted from the gate to the ...

We report on selective polarization mode excitation in InGaAs/GaAs rolled-up microtubes. The microtubes are fabricated by selectively releasing a coherently strained InGaAs/GaAs quantum dot layer from its host GaAs substrate. An optical fiber abrupt taper is used to pick up the microtube, while an adiabatically tapered optical fiber is used to couple light into the resonant optical modes of the...

In this work, the optical characteristics of monolithic passively mode-locked lasers (MLLs) fabricated from 1.24-μm InAs dots-in-a-Well (DWELL), 1.25-μm InGaAs single quantum well (SQW), and 1.55-μm GaInNAsSb SQW structures grown using elemental source molecular beam epitaxy (MBE) are reported. 5 GHz optical pulses with subpicosecond RMS jitter, high pulse peak power (1W) and narrow pulse width...