We present measurements on impact ionization effects, real space transfer of holes and electrons, and light emission occurring in n-channel InAlAdInGaAs heterostructure FieldEffect ”istors based on InP operated at high electric fields and at different temperatures. The channel electrons heated by the lateral electric field give rise to impact ionization and light emission. By comparing the elec...

Electron-impact ionization cross sections for diatomic molecules are calculated in a configuration-average distorted-wave method. Core bound orbitals for the molecular ion are calculated using a single-configuration self-consistent-field method based on a linear combination of Slater-type orbitals. The core bound orbitals are then transformed onto a two-dimensional r , numerical lattice from wh...

In this paper, a brief overview of TID effect in SOI technology is presented. The introduction of buried oxide(BOX) adds vulnerability to TID effect in SOI transistors because of its large thickness. Also the BOX introduces special charge traps, the delocalized spin centers, which in most cases are positive. The charge buildup in BOX could increase the leakage current in front gate transistor i...

High-field reliability issues connected with hot electron and impact ionization are typically the reliability bottleneck of power FETs for microwave and millimeter-wave applications. This work deals with some aspects of this problem, from characterization and accelerated stressing techniques to the physical degradation mechanisms, using power AlGaAs/GaAs HFETs as a test vehicle.

The STEREO/WAVES instrument has detected a very large number of intense voltage pulses. We suggest that these events are produced by impact ionisation of nanoparticles striking the spacecraft at a velocity of the order of magnitude of the solar wind speed. Nanoparticles, which are half-way between micron-sized dust and atomic ions, have such a large charge-to-mass ratio that the electric field ...

InAlAs/n+-InGaAs HFET’s have demonstrated a high breakdown voltage in spite of their narrow channel bandgap. In order to understand this unique feature, we have canied out a systematic study in a range of temperatures around room-temperature. We find that for HFET’s with L ~ = 1 . 9 pm, breakdown is drain-gate limited and is a two-step process. First, electrons are emitted from the gate to the ...

The ablation mechanism of fresh porcine skin has been studied using nanosecond laser pulses at the wavelengths of 1064, 532, 266, and 213 nm. We have identified the Na spectral line at 589 nm in the secondary radiation from the ablated skin sample as the signature of tissue ablation and measured the ablation probability near ablation threshold. Ablation depth per pulse has been measured by hist...

Results of laser-induced breakdown experiments in fused silica (SiOJ employing 150 fs-7 ns, 780 mn laser pulses are reported. The avalanche ionization mechanism is found to dominate over the entire pulse-width range. Fluence breakdown threshold does not follow the scaling of F,6, when pulses are shorter than 10 ps. The impact ionization coefficient of SiO, is measured up to -3 X 10’ V/cm. The r...

We have measured impact ionization coefficients, a and p, in 150 A pseudomorphically strained materials for the first time. The measurements were made on specially designed lateral p-i-n diodes. a and 0 in lattice-matched GaAs layers are found to be lower than those in strained Ino.zGacsAs and higher than those in strained Ina15Gac,,A10~,,As. fl is larger than a in all the samples. The results ...

Collective impact ionization has been used to exT1ain lock-on in semi-insulating GaAs under highvohage bias. W7ehave used this theory to study some of the steady state properties of lock-on current filaments. In steady state, the heat gained from the field is exactly compensated by the cooling due to phonon scattering. In the simplest approximation, the carrier distribution approaches a quasi-e...