The aim of the present work is to study the optimization of the electrical and optical properties of a-SiC:H Schottky diodes using thermal annealing process to a-SiC:H thin films in the range from 300C up to 675C. The films were deposited onto c-Si(n) using the rf sputtered method at three different hydrogen flow rates, 9sccm, 14sccm, and 20sccm. Subsequently, Al dots evaporated onto a-SiC:H in...

Ti:Sapphire lasers could provide tunable femtosecond pulses in the 680-1180 nm region; however, due to the requirement of expensive green pump sources, its current cost sets a barrier to its widespread adoption. As an alternative, Cr :Colquiriites (Cr:LiCAF, Cr:LiSAF, Cr:LiSGaF) also possess broad gain bandwidths and their total cw tuning range cover the 720-1110 nm region. Moreover, their broa...

BACKGROUND Discrimination of stem cells with flow cytometric analysis of Hoechst 33342 efflux by the ABCG2 transporter (termed the Hoechst side population, or SP technique) is a valuable methodology for identifying bone marrow progenitors enriched with stem cells. Unfortunately, it requires a ultraviolet (UV) laser source, usually necessitating an expensive and maintenance-intensive argon- or k...

The possible application of Schottky diodes as detector elements in receivers and image sensing systems operating in the THz frequency range has been demonstrated in the literature. In addition to metal-semiconductor (M-S) Schottky diodes, the use of heterojunction Schottky barrier diodes for detection and mixing applications has also been explored. Such diodes require lower d.c. bias voltages,...

Proton irradiation effects on strained Si 1.XGeX/Si heterostructures have been studied. For the experiment, p+-Sil -xGex/p--Si heterojunction diodes were fabricated by molecular beam epitax y (MBE) growth of strained p+boron doped SiGe layers on p -Si(100) substrates. Due to the valence band discontinuity between SiGe and Si layers, and degenerate doping in the SiGe layer, the characteristics o...

The incorporation of foreign elements into ZnO nanostructures is of significant interest for tuning the structure and optical and electrical properties in nanoscale optoelectronic devices. In this study, Ga-doped 1-D ZnO nanorods were synthesized using a hydrothermal route, in which the doping content of Ga was varied from 0% to 10%. The pn heterojunction diodes based on the n-type Ga-doped ZnO...

We report the manufacture of novel graphene diode sensors (GDS), which are composed of monolayer graphene on silicon substrates, allowing exposure to liquids and gases. Parameter changes in the diode can be correlated with charge transfer from various adsorbates. The GDS allows for investigation and tuning of extrinsic doping of graphene with great reliability. The demonstrated recovery and lon...

We report on the fabrication and characterization of silicon nanowire tunnel diodes. The silicon nanowires were grown on p-type Si substrates using Au-catalyzed vapor-liquid-solid growth and in situ n-type doping. Electrical measurements reveal Esaki diode characteristics with peak current densities of 3.6 kA/cm(2), peak-to-valley current ratios of up to 4.3, and reverse current densities of up...

‘Second harmonic power generation from GaAs-IMPATT diodes at 210GHz’, Int. J. Infrared Millim. Wuves, 1998, 19, (4), pp. 587593 EISELE, H.: ‘Efficient second-harmonic power extraction from GaAs TUNNETT diodes above 200GHz’, Electron. Lett., 1998, 34, (13), pp. 1324-1326 LIEBIG, D., and SCHUNEMANN, K.: ‘Cellular automaton particle simulation and sensitivity analysis of GaAs-MITATT-diodes for ope...

Infrared light-emitting diodes are currently fabricated from direct-gap semiconductors using epitaxy, which makes them expensive and difficult to integrate with other materials. Light-emitting diodes based on colloidal semiconductor quantum dots, on the other hand, can be solution-processed at low cost, and can be directly integrated with silicon. However, so far, exciton dissociation and recom...