A novel method for the fabrication of dielectric elastomer actuators (DEAs) combines acrylic polymers and single wall carbon nanotube network electrodes. DEAs made using this technique do not require prestretching, have extremely thin electrodes, and can be actuated at low voltage. The method is applied to create a multimorph device with nine actuation modes based on just four inputs.

Non-uniformity of the dielectric properties of highmaterial due to random grain orientation and phase separation will lead to variation in characteristics between different devices. Here we present a model for phase separated highdielectrics and investigate, by means of 3D numerical device simulation, the intrinsic parameter fluctuations which result from this structural non-uniformity.

A hydrogel-dielectric-elastomer system, polyacrylamide and poly(dimethylsiloxane) (PDMS), is adapted for extrusion printing for integrated device fabrication. A lithium-chloride-containing hydrogel printing ink is developed and printed onto treated PDMS with no visible signs of delamination and geometrically scaling resistance under moderate uniaxial tension and fatigue. A variety of designs ar...

Lasing in N(2) at 337 nm was achieved in a capacitively coupled discharge device having a cylindrical discharge volume with a length of 50 mm and a diameter of 3 mm. The cylindrical dielectric electrodes provide a nearly constant initial electric field throughout the discharge volume. Laser pulses with a width of 2.5 nsec (FWHM) and an energy of 8 microJ were obtained.

Fully-depleted transistor technologies, both planar and fin-type, are now in the mainstream for product designs. One of the many interesting topics in the new 3D FinFET technology is the approach to isolation. In this article, key elements that differentiate junction-isolated (bulk) and dielectric-isolated (SOI) FinFET transistors are discussed, encompassing aspects of process integration, devi...

Articles you may be interested in Tunneling field effect transistor integrated with black phosphorus-MoS2 junction and ion gel dielectric Appl. Material and device properties of superacid-treated monolayer molybdenum disulfide Appl. On the mechanism of highly efficient p-type conduction of Mg-doped ultra-wide-bandgap AlN nanostructures Appl.

High-performance and low-temperature-compatible solid phase crystallized polycrystalline silicon thin film transistors using thermal oxide buffered aluminum oxide (Al2O3) as gate dielectric are demonstrated. By growing a thermal oxide buffer layer using two-step annealing method, the interface quality is greatly improved, resulting in excellent device performance.

The paper reviews our recent progress and current challenges in implementing advanced gate stacks composed of high-j dielectric materials and metal gates in mainstream Si CMOS technology. In particular, we address stacks of doped polySi gate electrodes on ultrathin layers of high-j dielectrics, dual-workfunction metal-gate technology, and fully silicided gates. Materials and device characteriza...

The Academic World has always officially considered the transformer known as the “Tesla Coil” with its peculiar characteristics only as an electrotechnics device, a pure and simple “transformer”, and only as an apparatus for producing sparks, lightning-like discharges and high voltages impressive electric effects. By closer scientific investigation of the device it is however possible to throw ...

a r t i c l e i n f o Low-voltage electrowetting requires a thin dielectric capacitor and field strengths approaching 1 MV/cm. Unlike traditional metal/dielectric/metal capacitors, the conducting electrowetted liquid can electrically propagate through the smallest dielectric defects or pores, even for the best barrier polymers such as Parylenes, leading to catastrophic failure such as electroly...