It has been reported that lithium-rich cathode materials of LIB emit singlet oxygen during charging, which chemically oxidizes electrolyte solutions, and the decomposition products form surface film on material. However, detailed conditions mechanism formation its effect electrochemical reaction at electrode/electrolyte interface have not clarified in detail. In this study, using 0.5LiCoO 2 • 0...

We have synthesized single crystalline ZnO nanowires by thermal evaporation method and fabricated individual ZnO nanowire field effect transistors (FETs) to investigate their electrical properties. ZnO nanowires are strongly affected by O2 molecules in ambient. For example, surface defects such as oxygen vacancies act as adsorption sites of O2 molecules, and the chemisorption of O2 molecules de...

This paper explores the field emission (FE) properties of highly crystalline Si nanowires (NWs) with controlled surface passivation. The NWs were batch-grown by the vapor-liquid-solid process using Au catalysts with no intentional doping. The FE current-voltage characteristics showed quasi-ideal current saturation that resembles those predicted by the basic theory for emission from semiconducto...

The power conversion efficiency of CdSe and CdS quantum dot sensitized solar cells is enhanced by passivation with asymmetrically substituted phthalocyanines. The introduction of the phthalocyanine dye increases the efficiency up to 45% for CdSe and 104% for CdS. The main mechanism causing this improvement is the quantum dot passivation. This study highlights the possibilities of a new generati...

Dielectric interface would be formed on the electrode surface during the analysis or disposal of many phenolic compounds due to electro-polymerization. This could cause electrode passivation, also called electrode fouling, which is indicated by the continuously decaying current signal. This paper proposed a model based on the potential drop across the fouling layer, which is helpful for deep un...

Single-electron transistors (SETs) are sub-10-nm scale electronic devices based on conductive Coulomb islands sandwiched between double-barrier tunneling barriers. Chemically assembled SETs with alkanethiol-protected Au nanoparticles show highly stable Coulomb diamonds and two-input logic operations. The combination of bottom-up and top-down processes used to form the passivation layer is vital...

The performance of many silicon devices is limited by electronic recombination losses at the crystalline silicon c-Si surface. A proper surface passivation scheme is needed to allow minimizing these losses. The surface passivation properties of amorphous hydrogenated silicon a-Si:H on monocrystalline Si wafers are investigated here. We introduce a simple model for the description of the surface...

During fluorocarbon plasma etching of SiO2 , a polymer passivation layer is generally deposited on the surface of the wafer. The polymer layer regulates the etch by limiting the availability of activation energy and reactants, and providing the fuel for removal of oxygen. To investigate these processes, a surface reaction mechanism for fluorocarbon plasma etching of SiO2 has been developed. The...

In this paper, we report simulation results of a top-emission organic light-emitting device (TOLED) with a passivation layer composed of silicon dioxide (SiO2) and silicon nitride (Si3N4) to protect organic layers from oxygen and moisture. Usually, the thickness of such a layer is about several micrometers. The electrode material of the device used for simulation is silver (Ag). The anode is th...