In this work, the low-temperature process steps required for the realization of nano-crystal non-volatile memory cells are discussed. An amorphous silicon film, crystallized using a diode pumped solid state green laser irradiating at 532 nm, is proposed as an active layer. The deposition of the subsequent functional layers (e.g., gate oxide) can be done using CVD and ALD reactors in a cluster t...

In-situ TEM studies were conducted to reveal the crystallization features of equi-atomic TiNi amorphous thin films. The TiNi amorphous thin film crystallization procedure can be divided to be two types: the in-homogenous nucleation and growth mode in the ultra thin regions and the homogenous polymorphous mode in the thick areas. In the thin regions, the thickness controls the in-homogenous nucl...

Asymmetric truxene-based hole-transport material shows stable amorphous film and good efficiency in perovskite solar cell.

The early stages of thin film growth from the rf glow discharge of silane-based gas mixtures have been systematically studied by structural characterizations of the silicon based multilayers. The x-ray diffraction, its rocking curve and x-ray interference of hydrogenated amorphous silicon(a-Si:H, 10 % 200 A thick)/stoichiometric silicon nitride (a-SigNq:H, 25 % 250 A) multiple layers have been ...