This paper presents two low noise amplifier (LNA) circuit topologies for ultra-wideband wireless communications in 0.13μm PHEMT GaAs technology. They are with source inductive degeneration and source grounded, respectively. The simulation results show that the LNA involving source inductor possesses good performances at 120MHz-3GHz. Its noise figure(NF) and voltage standing wave ratios(VSWRs) a...

A fully matched Ka-band wideband pseudomorphic highelectron-mobility transistor (PHEMT) 1-W monolithic millimeter-wave integrated circuit (MMIC) high-power amplifier (HPA) without any external circuit is developed. The two-stage HPAs are prepared on 2-mil GaAs substrates with a small chip size of 3.46 2.9 mm. At least 10-dB small-signal gain, 29.5 dBm P 1dB, 31-dBm Psat, and better than 12-dB o...

Time-domain responses of wideband CMOS amplifiers using several inductive peaking techniques are presented. Transient performance considerations are described including the effects of transistor parasitics on settling time, edge rates, etc. A combination of timeand frequency-domain performance is derived for a given bandwidth extension technique and tradeoffs are discussed. Measured results for...

A low-voltage high-linearity wideband current differencing transconductance amplifier (CDTA) is presented in this paper. The CDTA consists of a current differencing circuit and a cross-coupling transconductance circuit. The PSPICE simulations of the proposed CDTA show a good performance: -3dB frequency bandwidth is about 900 MHz, low power consumption is 2.48 mW, input current linear range is ±...

In this paper, an ultra-wideband (UWB) common gate low-noise amplifier (LNA) with gm-boosted and noise-cancelling techniques is presented. In this scheme we utilize gm-boosted stage for cancelling the noise of matching device. The bandwidth extension and flat gain are achieved by using of series and shunt peaking techniques. Simulated in .13 um Cmos technology, the proposed LNA achieved 2.38-3....

Adaptive noise cancellation (ANC) technique can removes thermal and shaped wideband quantization noise from the output of sigma-delta modulator and improves SNR and SFDR ratios. ANC filter more than desired signal passes harmonics of input signal caused by analog element such as operational amplifier of the integrator without any suppression and this issue causes less increment in SNR and SFDR ...

This paper presents the integrated circuit design of an ultra-wideband (UWB) transceiver for a wireless endoscope that enables real-time diagnosis with high resolution images. The implemented UWB transceiver is a non-coherent transmit reference (TR) architecture with differential binary phase shift Keying (DBPSK) modulation. All-digital pulse generator (PG) and merged radio frequency (RF) front...

In this paper, an ultra-wideband (UWB) common gate low-noise amplifier (LNA) with -boosted and noise-cancelling techniques is presented. In this scheme we utilize gm-boosted stage for cancelling the noise of matching device. The bandwidth extension and flat gain are achieved by using of series and shunt peaking techniques. Simulated in .13 um Cmos technology, the proposed LNA achieved 2.38-3.4d...

Currently, the only available wideband (multiple MHz) amplifier linearization method is feedforward. Feedforward, though, requires automatic adaptation of key parameters for reliable distortion cancellation as operating conditions vary. With a novel and appropriate use of DSP, we have implemented a feedforward linearizer with adaptation driven by easily computed gradient signals. This overcomes...

This letter presents the design and characterization of a Doherty power amplifier for K-band applications based on GaAs 150-nm pseudomorphic HEMT (pHEMT) technology Qorvo. For output combiner, wideband approach, embedding capacitance active devices in is applied. A state-of-the-art bandwidth 4 GHz achieved: 21–25-GHz range, above 29.5 dBm, with an associated added efficiency (PAE) higher than 3...