Silicon integrated circuit interconnect technology has evolved rapidly, driven by the continual increase in device functional density. This paper reviews past technology developments and highlights current innovations such as the use of copper metallisation and low k dielectrics to overcome device speed limitations. Areas of convergence between silicon and compound semiconductor interconnect te...

Power semiconductor devices are the key electronic components used in power electronic systems. The solid-state power electronic revolution started with the invention of the thyristor or Silicon Controlled Rectifier (SCR) in 1956, and many power semiconductor devices have been produced since then. Advances in semiconductor technology have improved the efficiency of electronic devices which resu...

quantum well solar cells Imogen M. Pryce, Daniel D. Koleske, Arthur J. Fischer, and Harry A. Atwater Thomas J Watson Laboratories of Applied Physics, California Institute of Technology, Pasadena, California 91125, USA Semiconductor Materials and Device Sciences, Sandia National Laboratories, Albuquerque, New Mexico 87185, USA Kavli Nanoscience Institute, California Institute of Technology, Pasa...

A technology platform demonstrating wafer-level assembly of heterogeneous technologies based upon vertical wafer stacking is described. This platform offers the potential for low-cost assembly of various compound semiconductor circuits with silicon ICs for wide bandwidth optoelectronic and spaceconservative packaging applications. Process development results obtained to date are presented, and ...

Description: The development of nitride-based light-emitting diodes (LEDs) has led to advancements in high-brightness LED technology for solid-state lighting, handheld electronics, and advanced bioengineering applications. Nitride Semiconductor Light-Emitting Diodes (LEDs) reviews the fabrication, performance, and applications of this technology that encompass the state-of-the-art material and ...

rapid thermal processing (rtp) has become a key technology for semiconductor device manufacturing in a variety of applications, such as thermal oxidation, annealing, and thin-film growth. hence, understanding the radiative properties of silicon and other relevant materials is essential for the analysis of the thermal transport processes. we have analyzed and calculated the spectral, directional...

Sumitomo Electric Industries, Ltd. invented a technique to make polytetrafluoroethylene (PTFE) porous using PTFE stretching technology, which was patented in 1962.(1) Drawing on the technique, the company has subsequently released various porous PTFE products such as filters and hollow fiber products under the trade name of POREFLON. Porous PTFE filters, one of these porous PTFE products, use s...

We present an electrode based on complementary metal oxide semiconductor (CMOS) technology that can be made fully biocompatible and chemically inert using a simple, low-cost and non-specialised process. Since these devices are based on ubiquitous CMOS technology, the integrated circuits can be readily developed to include appropriate amplifiers, filters and wireless subsystems, thus reducing th...

complementary metal-oxide semiconductor (cmos) technology has been the industry standard to implement very large scale integrated (vlsi) devices for the last two decades. due to the consequences of miniaturization of such devices (i.e. increasing switching speeds, increasing complexity and decreasing power consumption), it is essential to replace them with a new technology. quantum-dot cellular...