Lithium-rich anti-perovskites (LiRAPs) are a promising family of solid electrolytes, which exhibit ionic conductivities above 10(-3) S cm(-1) at room temperature, among the highest reported values to date. In this work, we investigate the defect chemistry and the associated lithium transport in Li3OCl, a prototypical LiRAP, using ab initio density functional theory (DFT) calculations and classi...

A laser-induced Schottky-effect-gated photocathode gun has been in use since 2006. This new type of gun utilizes a laser’s coherency to create a compact laser source using Z-polarization of the IR laser on the cathode. This Z-polarization scheme reduces the laser pulse energy by reducing the cathode work function due to the Schottky effect. Before this epoch-making scheme emerged as a concept, ...

The irradiation effect of X-ray on the electrical properties Schottky-barrier diode (SBD) and metal-semiconductor field-effect transistors (MESFET) based surface conductivity hydrogen-terminated single-crystal diamond (SCD) epilayers was investigated. Ohmic contact formed by a Pd/Ti/Au multilayer Schottky metal Al thin film for fabrication SBDs MESFETs. performed with dose 100 kGy. It observed ...

This paper reports on a study of the impact of <110> uniaxial strain on the characteristics of InGaAs high electron mobility transitors (HEMT) by bending GaAs chips up to a strain level of 0.4%. Systematic changes in the threshold voltage and intrinsic transconductance were observed. These changes can be well predicted by Schrödinger-Poisson simulations of the one-dimensional electrostatics of ...

We use numerical simulations to investigate the effect of electrostatics on the source and drain contacts of carbon nanotube field‐effect transistors. We find that unscreened charge on the nanotube at the contact‐channel interface leads to a potential barrier that can significantly hamper transport through the device. This effect is largest for intermediate gate voltages and for contacts near t...

Planar GaAs Schottky diode based multiplier chains driven by HEMT power amplifiers have now demonstrated useful power beyond the 1 THz range. This paper will briefly review the state-of-the-art in planar Schottky diode multiplier chains for coherent detection. Future challenges and promising emerging technologies will also be outlined.

In this paper we look at a special type of discrete subgroups of PSLn+1(C) called Schottky groups. We develop some basic properties of these groups and their limit set when n > 1, and we prove that Schottky groups only occur in odd dimensions, i.e., they cannot be realized as subgroups of PSL2n+1(C).

A left-handed transmission line with regularly spaced Schottky varactors is experimentally characterized. Due to dispersion, an envelop pulse on the line experiences a great distortion. By measuring the test line, we successfully observed that this distortion is compensated for by the nonlinear effects of Schottky varactors. This article describes the experimental observations, together with fu...

The three-dimensional propagation of electromagnetic waves in a distributed Schottky barrier transmission line is investigated. In one case, we show that the electromagnetic fields are similar to those that were originally obtained by Goubau and Schwering in their development of the beam waveguide. This case can lead to a very low-loss distributed Schottky barrier resonator.

Nanowires (NWs) are recently used in several sensor or actuator devices to improve their ordered characteristics. Silicon nanowire (Si NW) is one of the most attractive one-dimensional nanostructures semiconductors because of its unique electrical and optical properties. In this paper, silicon nanowire (Si NW), is synthesized and characterized for application in photovoltaic device. Si NWs are ...