نتایج جستجو برای: pulsed pecvd
تعداد نتایج: 36207 فیلتر نتایج به سال:
Vertical graphene, which belongs to nanomaterials, is a very promising tool for improving the useful properties of long-used and proven materials. Since growth vertical graphene different on each base material has specific deposition setting parameters, it necessary examine separately. For this reason, full factor design experiment was performed with 26 = 64 rounds, contained additional 5 centr...
Obtaining high-throughput electrophysiological recordings is an ongoing challenge in ion channel biophysics and drug discovery. One particular area of development is the replacement of glass pipettes with planar devices in order to increase throughput. However, successful patch-clamp recordings depend on a surface coating which ideally should promote and stabilize giga-seal formation. Here, we ...
This work is mainly focused on an alternative method for emitter formation by means of boron diffusion from a boron-doped plasma-enhanced chemical vapor deposition (PECVD) doping source. With this approach only one high temperature process is necessary for emitter and BSF/FSF formation (co-diffusion), without depletion of surface doping concentration. This enables time and cost-efficient fabric...
N-type all-back-contact (ABC) silicon solar cells incorporating a simple oxide-nitride passivation scheme are presently being developed at the Australian National University. Having already achieved promising efficiencies with planar ABC cells [1], this work analyses the cell performance after integrating a surface texturing step into the process flow. Although the textured cells have significa...
We report on the “mid-term” results obtained in the frame of the European FLEXCELLENCE project (www.unine.ch/flex). FLEXCELLENCE aims at developing the equipment and the processes for cost-effective roll-to-roll production of high-efficiency thin-film modules, based on amorphous (a-Si:H) and microcrystalline silicon (μc-Si:H). Eight partners, with extended experience in complementary fields ran...
because of having good performance in cancelling the clutter echoes, pulsed-doppler radar is the best solution in some applications. in this paper a new algorithm for signal design and signal processing in high prf radar is developed. the robust chinese remainder theorem is the basis for estimating the unambiguous ranges in the proposed algorithm. two high prf pulsed-doppler radars are designed...
لایه نشانی اکسید سیلیسیم به روش رسوب گذاری بخار شیمیایی پلاسمایی با استفاده از ماده ی فلزی -آلی teos
لایه ی نازک اکسید سیلسیم به علت دارا بودن ضریب شکست پایین و در عین حال شفاف بودن در محدوده ی مریی کاربرد بسیار زیادی در قطعات اپتیکی و اپتوالکترونیکی دارد همچنین این ترکیب به علت دارا بودن خواص الکتریکی ویژه در قطعات میکروالکترونیک از جمله در مدارات مجتمع به طور وسیع مورد استفاده قرار می گیرد برای تولید ترکیب اکسید سیلسیم به صورت لایه نازک به روش رسوب گذاری بخار شیمیایی استفاده از گاز سیلان به ...
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