Measurements of the gate C-V characteristics of several conventional and pseudomorphic high electron mobility transistors (HEMT) on wafer and the comparison with simulations are presented. In order to study the influence of important technological parameters on the capacitance, the Schrodinger and Poisson equations were solved self-consistently in the structure, using the thickness of the doped...

The structure and hyperfine magnetic properties of epitaxial Fe ultrathin films on a vicinal Pds110d surface have been investigated by means of low-energy electron diffraction sLEEDd, reflection high-energy electron diffraction sRHEEDd and Fe conversion electron Mössbauer spectroscopy sCEMSd. LEED and RHEED provide evidence for initial pseudomorphic film growth. The RHEED determination of the i...

The use of amorphous calcium carbonate (ACC) as a precursor phase affords organisms with outstanding control over the formation calcite and aragonite biominerals. Essential to this strategy is that ACC maintained within confined volumes in absence bulk water. This ensures undergoes pseudomorphic transformation organism can independently nucleation growth. However, comparable has proven hard ach...

Effects of ion implantation of 320 keV “Si at room temperature in pseudomorphic metastable Ge$i,-, (x-0.04, 0.09, 0.13) layers 170 nm thick grown on Si( 100) wafers were characterized by x-ray double-crystal diffractometry and MeV 4He channeling spectrometry. The damage induced by implantation produces additional compressive strain in the Ge$i, _ x layers, superimposed on the intrinsic compress...

A compact wideband 2 -6GHz highly linear low noise amplifier is designed for Digital RF application. This design is implemented using MMIC using GaAs pseudomorphic high electron mobility transistors (pHEMTs). The proposed design is fundamentally designed for SDR and cognitive radio application. This LNA is implemented in 0.5um GaAs process and has a gain of 30dB at 2.45GHz and 23dB at 5GHz,Nois...

Intersubband transitions from the ground state to the first and second excited states in pseudomorphic AlGaAs/lnGaAs/GaAs/ AlGaAs multiple step quantum wells have been observed. The step well structure has a configuration of two A1GaAs barriers confining an InGaAs/GaAs step. Multiple step wells were grown on GaAs substrate with each InGaAs layer compressively strained. During the growth, a unif...

The silicon nitride passivated copper-metallized airbridges had been successfully integrated on the low noise PHEMT (Pseudomorphic High Electron Mobility Transistor) using WNx as the diffusion barrier between copper and the conventional gold based electrodes. 400 Å PECVD (Plasma Enhanced Chemical Vapor Deposition) silicon nitride was used for copper airbridge passivation to avoid the copper oxi...

A Bragg reflector consisting of a 25-period MnZnSSe/ZnSSE Bragg stack is reported. The II–VI semiconductor structure was grown by molecular beam epitaxy on a GaAs ~100! epilayer. Structural characterization of the Bragg reflector was performed with double crystal x-ray diffraction and transmission electron microscopy. These studies indicated that the epitaxial II–VI structure, whose total thick...

The dependence of interface roughness of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunneling diodes [RTDs] grown by molecular beam epitaxy on interruption time was studied by current-voltage [I-V] characteristics, photoluminescence [PL] spectroscopy, and transmission electron microscopy [TEM]. We have observed that a splitting in the quantum-well PL due to island formation in the quantum ...