نتایج جستجو برای: porous semiconductor

تعداد نتایج: 109885  

Journal: :The Journal of the Institute of Television Engineers of Japan 1974

Journal: :The Journal of the Institute of Television Engineers of Japan 1974

Journal: :The Journal of the Institute of Television Engineers of Japan 1973

2002
J. Heitmann R. Scholz

After first investigations on the room temperature photoluminescence (PL) signal of porous Si [1,2], interest in the optical properties of semiconductor nanoparticles, especially porous Si and Si nanoparticles, has grown over the last decade [3,4]. Different processes for the synthesis of nanocrystalline Si (nc-Si) like Si ion implantation into high quality oxides [3], sputtering of Si-rich oxi...

Journal: :journal of water sciences research 2011
j bazargan h zamanisabzi h hashemi a.r moazami

according to the former researcher’s presented relations for flow through rock-fill porous media, the effects of physical characteristics was not studied separately. hence, due to the application of these relations, physical characteristics of porous materials effect must be investigated separately. in various constructed physical models of porous media, the effect of several variables such as ...

Journal: :Nanotechnology 2008
Jongmin Lee Shadyar Farhangfar Jaeyoung Lee Laurent Cagnon Roland Scholz Ulrich Gösele Kornelius Nielsch

Arrays of thermoelectric bismuth telluride (Bi(2)Te(3)) nanowires were grown into porous anodic alumina (PAA) membranes prepared by a two-step anodization. Bi(2)Te(3) nanowire arrays were deposited by galvanostatic, potentiostatic and pulsed electrodeposition from aqueous solution at room temperature. Depending on the electrodeposition method and as a consequence of different growth mechanisms,...

2011
Abhijeet Paul Gerhard Klimeck Mark Lundstrom Timothy Boykin Leonid Rokhinson Gabriele Giuliani Saumitra Mehrotra Parijat Sengupta Samarth Agarwal Neerav Kharche Shuaib Salamat Mehdi Salmani Ganesh Hegde Sunhee Lee Zhengping Jiang Yahoa Tan Rajib Rahman Himadri Pal Muhammad Usman Kai Miao Cheryl Haines Vicki Johnson Junzhe Geng Victoria Savikhin Siqi Wang

Paul, Abhijeet, Purdue University, December 2011. Computational modeling and simulation study of electronic and thermal properties of semiconductor nanostructures. Major Professor: Gerhard Klimeck. The technological progress in dimensional scaling has not only kept Silicon CMOS industry on Moore’s law for the past five decades but has also benefited many other areas such as thermoelectricity, p...

2013
Bruno Capoen Abdallah Chahadih Hicham El Hamzaoui Odile Cristini Mohamed Bouazaoui

Space localization of the linear and nonlinear optical properties in a transparent medium at the submicron scale is still a challenge to yield the future generation of photonic devices. Laser irradiation techniques have always been thought to structure the matter at the nanometer scale, but combining them with doping methods made it possible to generate local growth of several types of nanocrys...

Journal: :Langmuir : the ACS journal of surfaces and colloids 2012
Barbara Völker Florian Wölzl Thomas Bürgi Dominic Lingenfelser

Processing dye-sensitized solar cells gains more and more importance as interest in industrial applications grows daily. For large-scale processing and optimizing manufacturing in terms of environmental acceptability as well as time and material saving, a detailed knowledge of certain process steps is crucial. In this paper we concentrate on the sensitizing step of production, i.e., the anchori...

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